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1N5406 Datasheet(PDF) 1 Page - Comchip Technology |
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1N5406 Datasheet(HTML) 1 Page - Comchip Technology |
1 / 2 page 1N5400 thru 1N5408 Features - Diffused Junction - High Current Capability and Low Forward Voltage Drop - Surge Overload Rating to 200A Peak - Low Reverse Leakage Current - Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data - Case: DO-201AD, Molded Plastic - Terminals: Solderable per MIL-STD-202, Method 208 - Polarity: Cathode Band - Weight: 1.1 grams (approx.) 3.0A Rectifier 3.0A Rectifier www.comchiptech.com COMCHIP COMCHIP MDS0312006A Page 1 Reverse Voltage: 50 to 1000V Forward Current: 3.0A DO-201AD Dimensions in inches and (millimeters) 0.189 (4.8) 0.209 (5.3) Dia. 0.047 (1.2) 0.051 (1.3) Dia. 1.0 (25.4) Min. 0.284 (7.2) 0.374 (9.5) 1.0 (25.4) Min. Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol 1N 5400 1N 5401 1N 5402 1N 5404 1N 5406 1N 5407 1N 5408 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @ TA = 105 °C (Note 1) IO 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200 A Forward Voltage @ IF = 3.0A VFM 1.0 V Peak Reverse Current @ TA = 25 °C at Rated DC Blocking Voltage @ TA = 150 °C IRM 10 100 mA Typical Junction Capacitance (Note 2) Cj 50 25 pF Typical Thermal Resistance Junction to Ambient RqJA 15 K/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. |
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