COP8SE datasheet(8/47 Pages) NSC

No. de pieza	COP8SE

Descripción Electrónicos	8-Bit CMOS ROM Based and OTP Microcontrollers with 4k Memory and 128 Bytes EERAM

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Fabricante Electrónico	NSC [National Semiconductor (TI)]

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Absolute Maximum Ratings (Note 14)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

CC)7V

Voltage at Any Pin

−0.3V to V

CC +0.3V

Total Current into V

CC Pin

(Source)

80 mA

Total Current out of GND Pin

(Sink)

100 mA

Storage Temperature Range

−65˚C to +150˚C

ESD Protection Level

2kV (Human Body

Model)

ESD Protection Level (CKI

pin)

150 V (Machine

Model)

Note 14:

Absolute maximum ratings indicate limits beyond which damage to

the device may occur. DC and AC electrical specifications are not ensured

when operating the device at absolute maximum ratings.

Note 15: The COP8SER7 is for Engineering Development purpose only and

is not recommended for production or pre-production use.

DC Electrical Characteristics (SEC5 only)

−40˚C

≤ T

A ≤ +135˚C unless otherwise specified.

Parameter

Conditions

Min

Typ

Max

Units

Operating Voltage

4.5

5.5

V

Power Supply Rise Time

10

50 x 10

6

ns

Power Supply Ripple (Note 17)

Peak-to-Peak

0.1 V

cc

V

Supply Current (Note 18)

CKI = 10 MHz

V

CC = 5.5V, tC =1µs

8

mA

HALT Current (Note 19)

V

CC = 5.5V, CKI = 0 MHz

15

50

µA

IDLE Current (Note 18)

CKI = 10 MHz

V

CC = 5.5V, tC =1µs

2

mA

Input Levels (V

IH,VIL)

RESET

Logic High

0.8 V

cc

V

Logic Low

0.2 V

cc

V

CKI, All Other Inputs

Logic High

0.7 V

cc

V

Logic Low

0.2 V

cc

V

Hi-Z Input Leakage

V

CC = 5.5V

−5

+5

µA

Input Pullup Current

V

CC = 5.5V, VIN = 0V

−35

−400

µA

G and L Port Input Hysteresis

V

CC = 5.5V

0.25

V

cc

V

Output Current Levels

Source (Weak Pull-Up Mode)

V

CC = 4.5V, VOH = 2.7V

−9.0

−140

µA

Source (Push-Pull Mode)

V

CC = 4.5V, VOH = 3.3V

−0.4

mA

Sink (Push-Pull Mode)

V

CC = 4.5V, VOL = 0.4V

1.6

mA

TRI-STATE Leakage

V

CC = 5.5V

−5

+5

µA

Allowable Sink Current per Pin (Note 22)

Maximum Input Current without Latchup (Note

20)

Room Temp.

±200

mA

RAM Retention Voltage, Vr

2.0

V

CC Rise Time from a VCC ≥ 2.0V

(Note 23)

6

µs

Input Capacitance

(Note 22)

7

pF

EERAM Number of Write Cycles

(Note 22)

10

5

cycles

EERAM Data Retention

(Note 22)

10

years

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COP8SE Datasheet(PDF) 8 Page - National Semiconductor (TI)

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