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TDA8922 Datasheet(PDF) 11 Page - NXP Semiconductors |
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TDA8922 Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 36 page 2003 Mar 20 11 Philips Semiconductors Objective specification 2 × 25 W class-D power amplifier TDA8922 9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. See Section 16.6. 10 THERMAL CHARACTERISTICS Note 1. See Section 16.5. 11 QUALITY SPECIFICATION In accordance with “General Quality Specification for Integrated Circuits: SNW-FQ-611D” if this device is used as an audio amplifier. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VP supply voltage −±30 V VMODE input voltage on pin MODE with respect to SGND − 5.5 V Vsc short-circuit voltage on output pins −±30 V IORM repetitive peak current in output pin note 1 − 4A Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air; note 1 TDA8922TH 35 K/W TDA8922J 35 K/W Rth(j-c) thermal resistance from junction to case note 1 TDA8922TH 1.3 K/W TDA8922J 1.3 K/W |
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