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DMP56D0UFB-7B Datasheet(Hoja de datos) 3 Page - Diodes Incorporated

No. de Pieza. DMP56D0UFB-7B
Descripción  Low On-Resistance
Descarga  7 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP56D0UFB
Document number: DS36175 Rev. 3 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DMP56D0UFB
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-50
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-10
µA
VDS = -50V, VGS = 0V
Gate-Source Leakage
IGSS
±1
µA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-0.5
-1.2
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS (ON)
——
4.6
6
6
8
Ω
VGS = -4.0V, ID = -100mA
VGS = -2.5V, ID = -80mA
Forward Transfer Admittance
|Yfs|
100
mS
VDS = -5V, ID = -100mA
Diode Forward Voltage (Note 7)
VSD
-1.2
V
VGS = 0V, IS = -100mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
50.54
pF
VDS = -25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
3.49
pF
Reverse Transfer Capacitance
Crss
2.42
pF
Gate Resistance
RG
201
Ω
VDS = 0V, VGS = 0V,
f = 1.0MHz
Total Gate Charge VGS = 4.5V
Qg
0.58
nC
VGS = -4V, VDS = -25V,
ID = -100mA
Gate-Source Charge
Qgs
0.09
nC
Gate-Drain Charge
Qgd
0.14
nC
Turn-On Delay Time
tD(on)
4.46
nS
VDD = -30V, ID = -0.27A,
VGEN = -4V, RGEN = 6Ω
Turn-On Rise Time
tr
6.63
nS
Turn-Off Delay Time
tD(off)
21.9
nS
Turn-Off Fall Time
tf
15.0
nS
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.




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