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DMN33D8LV-13 Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMN33D8LV-13 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 6 page DMN33D8LV Document number: DS36892 Rev. 2 - 2 4 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN33D8LV T , JUNCTION TEMPERATURE ( C) Figure 7 Gate Threshold Variation vs. Ambient Temperature J ° 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 I= 1mA D I = 250µA D V , SOURCE-DRAIN VOLTAGE (V) SD Figure 8 Diode Forward Voltage vs. Current T = 150°C A 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.3 0.6 0.9 1.2 1.5 T = 125°C A T = 85°C A T = 25°C A T= -55°C A V , DRAIN-SOURCE VOLTAGE (V) DS Figure 9 Typical Junction Capacitance 1 10 100 010 20 30 f = 1MHz Ciss Coss Crss Q(nC) g, TOTAL GATE CHARGE Figure 10 Gate Charge 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V = 10V I= A DS D 250m t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance R (t) = r(t) * R R = 289°C/W Duty Cycle, D = t1/ t2 θθ θ JA JA JA D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 |
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