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1PS79SB31 Datasheet(PDF) 3 Page - NXP Semiconductors |
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1PS79SB31 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  2002 Jan 11 3 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB31 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SC-79 (SOD523) standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.2; IF = 0.1 mA 130 190 mV IF = 1 mA 190 250 mV IF = 10 mA 255 300 mV IF = 100 mA 355 410 mV IF = 200 mA 420 500 mV IR continuous reverse current VR = 10 V; note 1; see Fig.3 2.5 30 µA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.4 20 25 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 450 K/W |
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