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2SK3475 Datasheet(Hoja de datos) 2 Page - Toshiba Semiconductor

No. de Pieza. 2SK3475
Descripción  VHF-and UHF-band Amplifier Applications
Descarga  4 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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 2 page
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2SK3475
2002-01-09
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0 V
¾
¾
5
mA
Gate-source leakage current
IGSS
VGS = 10 V
¾
¾
5
mA
Threshold voltage
Vth
VDS = 7.2 V, ID = 2 mA
1.9
2.4
2.9
V
Drain-source on-voltage
VDS (ON)
VGS = 10 V, ID = 75 mA
¾
87
¾
mV
Forward transconductance
Yfs
VDS = 7.2 V, IDS = 208 mA
¾
260
¾
mS
Input capacitance
Ciss
VDS = 7.2 V, VGS = 0 V, f = 1 MHz
¾
11
¾
pF
Output capacitance
Coss
VDS = 7.2 V, VGS = 0 V, f = 1 MHz
¾
12.5
¾
pF
Output power
PO
630
¾
¾
mW
Drain efficiency
hD
45
¾
¾
%
Power gain
GP
VDS = 7.2 V,
Iidle = 50 mA (VGS = adjust),
f
= 520 MHz, Pi = 20 mW,
14.9
¾
¾
dB
Low voltage output power
POL
VDS = 6.0 V,
Iidle = 50 mA (VGS = adjust),
f
= 520 MHz, Pi = 20 mW,
500
¾
¾
mW
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f
==== 520 MHz, VDS ==== 7.2 V, Iidle ==== 50 mA, Pi ==== 20 mW)
Pi
PO
C1
C2
C5
ZG = 50 W
L1
C7
C8
L3
R1
C9
C10
L4
VGS
VDS
C3
C4
L2
C6
ZL = 50 W
C1: 10 pF
C2: 10 pF
C3: 9 pF
C4: 6 pF
C5: 2200 pF
C6: 2200 pF
C7: 10
mF
C8: 10000 pF
C9: 10
mF
C10: 10000 pF
L1:
f0.8 mm enamel wire, 2.2ID, 1T
L2:
f0.8 mm enamel wire, 2.2ID, 1T
L3:
f0.8 mm enamel wire, 5.5ID, 4T
L4:
f0.8 mm enamel wire, 5.5ID, 8T
R1: 1.5 k
W




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