DS25CP102Q

www.ti.com

SNLS293E – MAY 2008 – REVISED APRIL 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

−0.3V to +4V

LVCMOS Input Voltage

LVDS Input Voltage

−0.3V to +4V

Differential Input Voltage |VID|

1.0V

LVDS Output Voltage

LVDS Differential Output Voltage

0V to 1.0V

LVDS Output Short Circuit Current Duration

5 ms

Junction Temperature

+105°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature Range

Soldering (4 sec.)

+260°C

Maximum Package Power Dissipation at 25°C

RGH0016A Package

1.91W

Derate RGH0016A Package

23.9 mW/°C above +25°C

Package Thermal Resistance

+41.8°C/W

+6.9°C/W

ESD Susceptibility

≥8 kV

≥250V

≥1250V

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or

other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating

Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

(3)

Human Body Model, applicable std. JESD22-A114C

(4)

Machine Model, applicable std. JESD22-A115-A

(5)

Field Induced Charge Device Model, applicable std. JESD22-C101-C

Recommended Operating Conditions

Min

Typ

Max

Units

3.0

3.3

3.6

V

0

1

V

−40

+25

+85

°C

DC Electrical Characteristics

(1) (2) (3)

Over recommended operating supply and temperature ranges unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

LVCMOS DC SPECIFICATIONS

High Level Input Voltage

2.0

V

Low Level Input Voltage

GND

0.8

V

(1)

The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and

are not ensured.

(2)

Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground

(3)

at the time of product characterization and are not ensured.

Copyright © 2008–2013, Texas Instruments Incorporated

Submit Documentation Feedback

3

Product Folder Links: DS25CP102Q