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AD5660ARJ-3 Datasheet(PDF) 3 Page - Analog Devices |
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AD5660ARJ-3 Datasheet(HTML) 3 Page - Analog Devices |
3 / 20 page Preliminary Technical Data AD5660 Rev. PrJ | Page 3 of 20 AD5660X-2/3–SPECIFICATIONS VDD = 4.5 V to 5.5 V; RL = 2 kΩ to GND; CL = 200 pF to GND; all specifications TMIN to TMAX, unless otherwise noted. Table 1. Parameter A Grade B Grade C Grade Unit B Version 1 Conditions/Comments STATIC PERFORMANCE2 Resolution 16 16 16 Bits min Relative Accuracy ±32 ±16 ±16 LSB max See Figure 4 Differential Nonlinearity ±1 ±1 ±1 LSB max Guaranteed Monotonic by Design. See Figure 5. Zero Code Error +5 +5 +5 mV typ All Zeroes Loaded to DAC +20 +20 +20 mV max Register. See Figure 8. Full-Scale Error −0.15 −0.15 −0.15 % of FSR typ All Ones Loaded to DAC −1.25 −1.25 −1.25 % of FSR max Register. See Figure 8 Gain Error ±1.25 ±1.25 ±1.25 % of FSR max Zero Code Error Drift3 ±20 ±20 ±20 µV/°C typ Gain Temperature Coefficient ±5 ±5 ±5 ppm typ f FSR/°C OUTPUT CHARACTERISTICS3 Output Voltage Range 0 0 V min VDD VDD VDD V max Output Voltage Settling Time 8 8 8 µs typ To ±0.003% FSR 0200H to FD00H 10 10 10 µs max RL = 2 kΩ; 0 pF <CL < 200 pF See Figure 18. 12 12 12 µs typ RL = 2 kΩ; CL = 500 pF Slew Rate 1 1 1 V/µs typ Capacitive Load Stability 470 470 470 pF typ RL = ∞ 1000 1000 1000 pF typ RL = 2 kΩ Output Noise 100 100 100 nV/√Hz typ DAC code = 8400H, 10 kHz Output Drift ppm/°C typ Digital-to-Analog Glitch Impulse 10 10 10 nV-s typ 1 LSB Change Around Major Carry. See Figure 21. Digital Feedthrough 0.5 0.5 0.5 nV-s typ DC Output Impedance 1 1 1 Ω typ Short Circuit Current 50 50 50 mA typ VDD = 5 V Power-Up Time 10 10 10 ms typ Coming Out of Power-Down Mode. VDD = 5 V REFERENCE OUTPUT Output Voltage AD5660x-2/3 2.495 2.495 2.495 V min 2.505 2.505 2.505 V max Reference TC ±25 ±25 ±10 ppm/°C max LOGIC INPUTS3 Input Current ±1 ±1 ±1 µA max VINL, Input Low Voltage 0.8 0.8 0.8 V max VDD = 5 V VINH, Input High Voltage 2 2 2 V min VDD = 5 V Pin Capacitance 3 3 3 pF max |
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