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CDCM6208V2G Datasheet(PDF) 10 Page - Texas Instruments |
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CDCM6208V2G Datasheet(HTML) 10 Page - Texas Instruments |
10 / 88 page 10 CDCM6208V2G SNAS682 – MARCH 2016 www.ti.com Product Folder Links: CDCM6208V2G Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 8.10 Differential Input Characteristics (PRI_REF, SEC_REF) VDD_PRI, VDD_SEC = 1.71 V to 1.89 V, 2.375 V to 2.625 V, 3.135 V to 3.465 V, TA = –40°C TO 85°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT fIN Reference and Bypass Input Frequency 0.008 250 MHz VI Differential Input Voltage Swing, Peak-to- Peak VDD_PRI/SEC = 2.5/3.3 V 0.2 1.6 VPP VDD_PRI/SEC = 1.8 V 0.2 1 VPP VICM Input Common Mode Voltage CML input signaling, R4[7:6] = 00 VDD_PRI/V DD_SEC- 0.4 VDD_PRI/V DD_SEC- 0.1 V VICM Input Common Mode Voltage LVDS, VDD_PRI/SEC = 1.8/2.5/3.3 V, R4[7:6] = 01, R4.1 = d.c., R4.0 = d.c. 0.8 1.2 1.5 V VHYST Input hysteresis LVDS (Q4[7:6,4:3] = 01) 15 65 mVpp CML (Q4[7:6,4:3] = 00) 20 85 mVpp IIH Input High Current VDD_PRI/SEC = 3.465 V, VIH = 3.465 V 30 µA IIL Input Low Current VDD_PRI/SEC = 3.465V, VIL = 0 V -30 µA ΔV/ΔT Reference Input Edge Rate 20% - 80% 0.75 V/ns IDCDIFF Reference Input Duty Cycle 30% 70% CIN Input Capacitance 2.7 pF (1) Verified with crystals specified for a load capacitance of CL=8pF, the pcb related capacitive load was estimated to be 2.3pF, and completed with a load capacitors of 4pF on each crystal terminal connected to GND. XTALs tested: NX3225GA 10MHz EXS00A- CG02813 CRG, NX3225GA 19.44MHz EXS00A-CG02810 CRG, NX3225GA 25MHz EXS00A-CG02811 CRG, and NX3225GA 30.72MHz EXS00A-CG02812 CRG. (2) For 30.73 MHz to 50 MHz, it is recommended to verify sufficient negative resistance and initial frequency accuracy with the crystal vendor. The 50 MHz use case was verified with a NX3225GA 50MHz EXS00A-CG02814 CRG. To meet a minimum frequency error, the best choice of the XTAL was one with CL = 7pF instead of CL = 8pF. (3) With NX3225GA_10M the measured remaining negative resistance on the EVM is 6430 Ω (43 x margin) (4) With NX3225GA_25M the measured remaining negative resistance on the EVM is 1740 Ω (25 x margin) (5) With NX3225GA_50M the measured remaining negative resistance on the EVM is 350 Ω (11 x margin) (6) Maximum drive level measured was 145 µW; XTAL should at least tolerate 200 µW 8.11 Crystal Input Characteristics (SEC_REF) VDD_SEC = 1.71 to 1.89 V, 2.375 V to 2.625 V, 3.135 V to 3.465 V,TA = –40°C to 85°C PARAMETER MIN TYP MAX UNIT MODE OF OSCILLATION FUNDAMENTAL Frequency See note (1) 10 30.72 MHz See note (2) 30.73 50 MHz Equivalent Series Resistance (ESR) 10 MHz 150(3) Ω 25 MHz 70(4) 50 MHz 30(5) On-chip load capacitance 1.8 V / 3.3 V SEC_REFP 3.5 4.5 5.5 pF 1.8 V SEC_REFN 5.5 7.25 8.5 3.3 V SEC_REFN 6.5 7.34 8.5 Drive Level See note (6) 200 µW |
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