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CSD17577Q5AT Datasheet(PDF) 3 Page - Texas Instruments

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No. de Pieza. CSD17577Q5AT
Descripción  30V N-Channel NexFET Power MOSFET
Descarga  13 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD17577Q5AT Datasheet(HTML) 3 Page - Texas Instruments

 
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CSD17577Q5A
www.ti.com
SLPS516 – AUGUST 2014
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
30
V
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 24 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
1.1
1.4
1.8
V
VGS = 4.5 V, ID = 10 A
4.8
5.8
m
RDS(on)
Drain-to-Source On-Resistance
VGS = 10 V, ID = 18 A
3.5
4.2
m
gƒs
Transconductance
VDS = 3 V, ID = 18 A
79
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
1780
2310
pF
Coss
Output Capacitance
VGS = 0 V, VDS = 15 V, ƒ = 1 MHz
208
270
pF
Crss
Reverse Transfer Capacitance
79
102
pF
RG
Series Gate Resistance
1.4
2.8
Qg
Gate Charge Total (4.5 V)
13
17
nC
Qg
Gate Charge Total (10 V)
27
35
nC
Qgd
Gate Charge Gate-to-Drain
VDS = 15 V, ID = 18 A
2.8
nC
Qgs
Gate Charge Gate-to-Source
5.1
nC
Qg(th)
Gate Charge at Vth
2.5
nC
Qoss
Output Charge
VDS = 15 V, VGS = 0 V
6
nC
td(on)
Turn On Delay Time
3
ns
tr
Rise Time
12
ns
VDS = 15 V, VGS = 10 V,
IDS = 18 A, RG = 0 Ω
td(off)
Turn Off Delay Time
18
ns
tƒ
Fall Time
2
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = 18 A, VGS = 0 V
0.8
1
V
Qrr
Reverse Recovery Charge
8.2
nC
VDS= 15 V, IF = 18 A,
di/dt = 300 A/
μs
trr
Reverse Recovery Time
9.3
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-Case Thermal Resistance(1)
2.8
°C/W
RθJA
Junction-to-Ambient Thermal Resistance(1)(2)
50
(1)
RθJC is determined with the device mounted on a 1-inch
2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board
design.
(2)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
Copyright © 2014, Texas Instruments Incorporated
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