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CSD23280F3 Datasheet(PDF) 5 Page - Texas Instruments

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No. de pieza CSD23280F3
Descripción Electrónicos  12V P-Channel FemtoFET MOSFET
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

CSD23280F3 Datasheet(HTML) 5 Page - Texas Instruments

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TC - Case Temperature (qC)
-75
-50
-25
0
25
50
75
100
125
150
175
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
D008
VGS = -1.8 V
VGS = -2.5 V
VGS = -4.5 V
-VSD - Source-To-Drain Voltage (V)
0
0.2
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
1
10
D009
TC = 25qC
TC = 125qC
TC - Case Temperature (qC)
-75
-50
-25
0
25
50
75
100
125
150
175
0.25
0.35
0.45
0.55
0.65
0.75
0.85
0.95
D006
-VGS - Gate-To-Source Voltage (V)
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
350
D007
TC = 25°C, I D = -0.4 A
TC = 125°C, I D = -0.4 A
Qg - Gate Charge (nC)
0
0.2
0.4
0.6
0.8
1
1.2
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
D004
-VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
10
12
1
10
100
1000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
5
CSD23280F3
www.ti.com
SLPS601 – APRIL 2016
Product Folder Links: CSD23280F3
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
VDS = –6 V
ID = –0.4 A
Figure 4. Gate Charge
Figure 5. Capacitance
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
VGS = –4.5 V
ID = –0.4 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage


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