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CSD25202W15T Datasheet(Hoja de datos) 5 Page - Texas Instruments

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No. de Pieza. CSD25202W15T
Descripción  20V P-Channel NexFET Power MOSFET
Descarga  12 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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 5 page
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0.25
0.35
0.45
0.55
0.65
0.75
0.85
0.95
1.05
−75
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature (ºC)
G001
10
14
18
22
26
30
34
38
42
46
50
0
1
2
3
4
5
6
− V
GS - Gate-to- Source Voltage (V)
TC = 25°C,I D = −2A
TC = 125°C,I D = −2A
G001
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
6
Qg - Gate Charge (nC)
G001
0
100
200
300
400
500
600
700
800
900
1000
0
2
4
6
8
10
12
14
16
18
20
− V
DS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
0
2
4
6
8
10
12
14
16
18
20
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
− V
DS - Drain-to-Source Voltage (V)
VGS = −4.5V
VGS = −2.5 V
VGS = −1.8V
G001
0
5
10
15
20
25
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
− V
GS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
G001
CSD25202W15
www.ti.com
SLPS508A – JUNE 2014 – REVISED JULY 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
VDS = –5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
ID = –2 A
VDS = –10 V
Figure 4. Gate Charge
Figure 5. Capacitance
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Copyright © 2014, Texas Instruments Incorporated
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Product Folder Links: CSD25202W15




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