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CSD25481F4 Datasheet(Hoja de datos) 1 Page - Texas Instruments

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No. de Pieza. CSD25481F4
Descripción  20 V P-Channel FemtoFET MOSFET
Descarga  13 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD25481F4
SLPS420D – SEPTEMBER 2013 – REVISED OCTOBER 2014
CSD25481F4 20 V P-Channel FemtoFET™ MOSFET
1 Features
Product Summary
1
Ultra-Low On Resistance
TA = 25°C
TYPICAL VALUE
UNIT
Ultra-Low Qg and Qgd
VDS
Drain-to-Source Voltage
–20
V
High Operating Drain Current
Qg
Gate Charge Total (–4.5 V)
913
pC
Qgd
Gate Charge Gate-to-Drain
153
pC
Ultra-Small Footprint (0402 Case Size)
VGS = –1.8 V
395
m
1 mm × 0.6 mm
Drain-to-Source
RDS(on)
VGS = –2.5 V
145
m
On-Resistance
Ultra-Low Profile
VGS = –4.5 V
90
m
0.35 mm Max Height
VGS(th)
Threshold Voltage
–0.95
V
Integrated ESD Protection Diode
Rated >4 kV HBM
Ordering Information(1)
Rated >2 kV CDM
Device
Qty
Media
Package
Ship
7-Inch
Lead and Halogen Free
CSD25481F4
3000
Femto(0402)
Reel
Tape and
1.0 mm × 0.6 mm
RoHS Compliant
Reel
7-Inch
Land Grid Array (LGA)
CSD25481F4T
250
Reel
2 Applications
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Optimized for Load Switch Applications
Optimized for General Purpose Switching
Absolute Maximum Ratings
Applications
TA = 25°C unless otherwise stated
VALUE
UNIT
Battery Applications
VDS
Drain-to-Source Voltage
–20
V
Handheld and Mobile Applications
VGS
Gate-to-Source Voltage
–12
V
ID
Continuous Drain Current(1)
–2.5
A
3 Description
IDM
Pulsed Drain Current(2)
–10
A
This 90 m
Ω, 20 V P-Channel FemtoFET™ MOSFET
Continuous Gate Clamp Current
–35
IG
mA
is designed and optimized to minimize the footprint in
Pulsed Gate Clamp Current(2)
–350
many
handheld
and
mobile
applications.
This
PD
Power Dissipation(1)
500
mW
technology is capable of replacing standard small
Human Body Model (HBM)
4
kV
V (ESD)
signal MOSFETs while providing at least a 60%
Charged Device Model (CDM)
2
kV
reduction in footprint size.
TJ,
Operating Junction and
–55 to 150
°C
Tstg
Storage Temperature Range
.
(1) Typical RθJA = 85°C/W on 1 inch
2
(6.45 cm2), 2 oz.
Typical Part Dimensions
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration
≤ 300 μs, duty cycle ≤ 2%
Top View
.
.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




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