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AD8034AR Datasheet(PDF) 5 Page - Analog Devices

No. de pieza AD8034AR
Descripción Electrónicos  Low Cost, 80 MHz FastFET ??Op Amps
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Fabricante Electrónico  AD [Analog Devices]
Página de inicio  http://www.analog.com
Logo AD - Analog Devices

AD8034AR Datasheet(HTML) 5 Page - Analog Devices

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REV. B
AD8033/AD8034
–5–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8033/AD8034 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
AMBIENT TEMPERATURE – C
–60
–40
–20
0
20
40
60
80
100
2.0
1.5
1.0
0.5
0.0
SOIC-8
SOT-23-8
SC70-5
Figure 2. Maximum Power Dissipation vs.
Temperature for a Four-Layer Board
ORDERING GUIDE
WARNING!
ESD SENSITIVE DEVICE
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8033/AD8034
packages is limited by the associated rise in junction temperature
(TJ) on the die. The plastic that encapsulates the die will locally
reach the junction temperature. At approximately 150
°C, which is
the glass transition temperature, the plastic will change its proper-
ties. Even temporarily exceeding this temperature limit may change
the stresses that the package exerts on the die, permanently shifting
the parametric performance of the AD8033/AD8034. Exceeding a
junction temperature of 175
°C for an extended period of time can
result in changes in silicon devices, potentially causing failure.
The still-air thermal properties of the package and PCB ( JA),
ambient temperature (TA), and the total power dissipated in the
package (PD) determine the junction temperature of the die.
The junction temperature can be calculated as follows
TT
AD
A
JJ
=+
×
()
P
θ
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the package
due to the load drive for all outputs. The quiescent power is the
voltage between the supply pins (VS) times the quiescent current (IS).
Assuming the load (RL) is referenced to midsupply, then the total
drive power is VS/2
IOUT, some of which is dissipated in the
package and some in the load (VOUT
IOUT). The difference
between the total drive power and the load power is the drive
power dissipated in the package:
P
Quiescent Power
Total Drive Power
Load Power
D =+ (–
)
PV
I
V
V
R
V
R
DS
S
S
OUT
L
OUT
L
[]+ ()×()
[]
[]
//
/
2
2
RMS output voltages should be considered. If RL is referenced
to VS–, as in single-supply operation, then the total drive power
is VS
IOUT.
If the rms signal levels are indeterminate, consider the worst
case, when VOUT = VS /4 for RL to midsupply:
PV
I
V
R
DS
S
S
L
()+()
//
4
2
In single-supply operation with RL referenced to VS–, worst case
is VOUT = VS /2.
Airflow will increase heat dissipation, effectively reducing JA.
Also, more metal directly in contact with the package leads from
metal traces, through holes, ground, and power planes will reduce
the JA. Care must be taken to minimize parasitic capacitances at
the input leads of high speed op amps as discussed in the Layout,
Grounding, and Bypassing Considerations section.
Figure 2 shows the maximum safe power dissipation in the
package versus the ambient temperature for the SOIC-8 (125
°C/W),
SC70 (210
°C/W), and SOT-23-8 (160°C/W) packages on a JEDEC
standard 4-layer board. JA values are approximations.
OUTPUT SHORT CIRCUIT
Shorting the output to ground or drawing excessive current for
the AD8033/AD8034 will likely cause catastrophic failure.
Model
Temperature Range
Package
Description
Package Outline
Branding
Information
AD8033AR
+85ºC
8-Lead SOIC
R-8
AD8033AR-REEL
+85ºC
8-Lead SOIC
R-8
AD8033AR-REEL7
+85ºC
8-Lead SOIC
R-8
AD8033AKS-REEL
+85ºC
5-Lead SC70
KS-5
H3B
AD8033AKS-REEL7
–40ºC to +85ºC
5-Lead SC70
KS-5
H3B
AD8034AR
–40ºC to +85ºC
8-Lead SOIC
R-8
AD8034AR-REEL7
–40ºC to +85ºC
8-Lead SOIC
R-8
AD8034AR-REEL
–40ºC to +85ºC
8-Lead SOIC
R-8
AD8034ART-REEL
+85ºC
8-Lead SOT-23
RT-8
RT-8
HZA
AD8034ART -REEL7
+85ºC
8-Lead SOT-23
HZA
–40ºC to
–40ºC to
–40ºC to
–40ºC to
–40ºC to
–40ºC to


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