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DMP3028LSD Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP3028LSD
Descripción  30V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP3028LSD
Document number: DS35966 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMP3028LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
-6
-4.7
A
t<10s
TA = +25°C
TA = +70°C
ID
-7.4
-5.8
A
Maximum Body Diode Forward Current (Note 6)
IS
-2.5
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
-30
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
1.3
W
TA = +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
ΘJA
102
°C/W
t<10s
61
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.7
W
TA = +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
ΘJA
75
°C/W
t<10s
50
Thermal Resistance, Junction to Case (Note 6)
R
ΘJC
14.5
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS =±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-1
-3
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
20
25
m
VGS = -10V, ID = -7A
29
38
VGS = -4.5V, ID = -5.5A
Forward Transfer Admittance
|Yfs|
11
S
VDS = -5V, ID = -7A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = -2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
1241
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
147
Reverse Transfer Capacitance
Crss
110
Gate Resistance
RG
15
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
22
nC
VDS = -15V, ID = -7A
Total Gate Charge (VGS = -10V)
Qg
10.9
Gate-Source Charge
Qgs
3.5
Gate-Drain Charge
Qgd
4.7
Turn-On Delay Time
tD(on)
9.7
nS
VGS = -10V, VDD = -15V, RGEN = 6Ω,
ID = -7A
Turn-On Rise Time
tr
17.1
Turn-Off Delay Time
tD(off)
60.5
Turn-Off Fall Time
tf
40.4
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.




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