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DMP3036SSS-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP3036SSS-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMP3036SSS Document number: DS36460 Rev. 3 - 2 2 of 6 www.diodes.com April 2015 © Diodes Incorporated DMP3036SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = -10V TC = +25°C TC = +70°C ID -19.5 -15.6 A TA = +25°C TA = +70°C ID -11.4 -9.2 A Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM -80 A Maximum Continuous Body Diode Forward Current (Note 6) IS -3.6 A Avalanche Current (Note 7) L = 0.3mH IAS -17.5 A Avalanche Energy (Note 7) L = 0.3mH EAS 64 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 1.4 W TA = +70°C 0.9 Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 88 °C/W t<10s 37 Total Power Dissipation (Note 6) TA = +25°C PD 1.9 W TA = +70°C 1.2 Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 65 °C/W t<10s 32 Thermal Resistance, Junction to Case (Note 6) RθJC 11 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -1mA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - -1.0 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1.0 -1.7 -3.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) - - 16 20 m Ω VGS = -10V, ID = -9A 22 29 VGS = -5V, ID = -7A Diode Forward Voltage VSD - -0.7 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 1931 - pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 226 - pF Reverse Transfer Capacitance Crss - 168 - pF Gate Resistance Rg - 10.9 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge at (VGS = -5V) Qg - 8.8 - nC VDS = -15V, ID = -10A Total Gate Charge at (VGS = -10V) Qg - 16.5 - nC VDS = -15V, ID = -10A Gate-Source Charge Qgs - 2.6 - nC Gate-Drain Charge Qgd - 3.6 - nC Turn-On Delay Time tD(on) - 8.2 - ns VGEN = -10V, VDD = -15V, RGEN = 3Ω, ID = -10A Turn-On Rise Time tr - 14 - ns Turn-Off Delay Time tD(off) - 65 - ns Turn-Off Fall Time tf - 31.6 - ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
Número de pieza similar - DMP3036SSS-13 |
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Descripción similar - DMP3036SSS-13 |
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