DMP3036SSS

Document number: DS36460 Rev. 3 - 2

2 of 6

www.diodes.com

April 2015

© Diodes Incorporated

DMP3036SSS

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±25

V

-19.5

-15.6

A

-11.4

-9.2

A

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

-80

A

Maximum Continuous Body Diode Forward Current (Note 6)

-3.6

A

Avalanche Current (Note 7) L = 0.3mH

-17.5

A

Avalanche Energy (Note 7) L = 0.3mH

64

mJ

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.4

W

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

88

°C/W

t<10s

37

Total Power Dissipation (Note 6)

1.9

W

1.2

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

65

°C/W

t<10s

32

Thermal Resistance, Junction to Case (Note 6)

11

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

-30

-

-

V

-

-

-1.0

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

-1.0

-1.7

-3.0

V

Static Drain-Source On-Resistance

-

-

16

20

m

Ω

22

29

Diode Forward Voltage

-

-0.7

-1.0

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

-

1931

-

pF

f = 1.0MHz

Output Capacitance

-

226

-

pF

Reverse Transfer Capacitance

-

168

-

pF

Gate Resistance

-

10.9

-

Ω

-

8.8

-

nC

-

16.5

-

nC

Gate-Source Charge

-

2.6

-

nC

Gate-Drain Charge

-

3.6

-

nC

Turn-On Delay Time

-

8.2

-

ns

Turn-On Rise Time

-

14

-

ns

Turn-Off Delay Time

-

65

-

ns

Turn-Off Fall Time

-

31.6

-

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.