Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
DMP4013LFGQ-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
|
DMP4013LFGQ-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMP4013LFGQ Document number: DS38779 Rev. 1 - 2 2 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP4013LFGQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25°C TA = +70°C ID -10.3 -8.3 A t<10s TA = +25°C TA = +70°C ID -13.7 -11 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 80 A Maximum Continuous Body Diode Forward Current (Note 7) IS 2.6 A Avalanche Current, L = 0.1mH IAS 34 A Avalanche Energy, L = 0.1mH EAS 58 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) PD 1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 123 °C/W t<10s 69 Total Power Dissipation (Note 7) PD 2.1 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RθJA 60 °C/W t<10s 34 Thermal Resistance, Junction to Case (Note 7) RθJC 3.3 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -40 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -1 — -3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 9.4 13 m Ω VGS = -10V, ID = -10A — 12.3 18 VGS = -4.5V, ID = -8A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance CISS — 3,426 — pF VDS = -20V, VGS = 0V, f = 1MHz Output Capacitance COSS — 283 — pF Reverse Transfer Capacitance CRSS — 235 — pF Gate Resistance RG — 4.7 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) QG — 32.5 — nC VDS = -20V, ID = -10A Total Gate Charge (VGS = -10V) QG — 68.6 — nC Gate-Source Charge QGS — 8.2 — nC Gate-Drain Charge QGD — 9.9 — nC Turn-On Delay Time tD(ON) — 5.3 — ns VDD = -20V, VGEN = -10V, RG = 3Ω, ID = -10A Turn-On Rise Time tR — 20 — ns Turn-Off Delay Time tD(OFF) — 126 — ns Turn-Off Fall Time tF — 83 — ns Body Diode Reverse Recovery Time tRR — 19.5 — ns IF = -10A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 9.8 — nC Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
Número de pieza similar - DMP4013LFGQ-7 |
|
Descripción similar - DMP4013LFGQ-7 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |