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DMP4015SSS Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP4015SSS Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMP4015SSS Document number: DS35416 Rev. 9 - 2 2 of 6 www.diodes.com November 2015 © Diodes Incorporated DMP4015SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = -10V Steady State TA = +25°C TA = +70°C ID -9.1 -7.2 A Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -7.8 -6.2 A Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -10.1 -8 A Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -8.8 -7 A Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM -100 A Avalanche Current (Note 7) IAS -22 A Avalanche Energy (Note 7) EAS 242 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 1.45 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 88 °C/W Total Power Dissipation (Note 6) PD 1.82 W Thermal Resistance, Junction to Ambient (Note 6) RθJA 70 °C/W Thermal Resistance, Junction to Case (Note 6) RθJc 7.6 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -40 V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS -1 μA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 25V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1.5 -2 -2.5 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) 7 11 m Ω VGS = -10V, ID = -9.8A 9 15 VGS = -4.5V, ID = -9.8A Forward Transfer Admittance |Yfs| 26 S VDS = -20V, ID = -9.8A Diode Forward Voltage (Note 5) VSD -0.7 -1 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 4,234 pF VDS = -20V, VGS = 0V f = 1MHz Output Capacitance Coss 1,036 Reverse Transfer Capacitance Crss 526 Gate Resistance RG 7.77 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg 47.5 nC VDS = -20V, VGS = -5V ID = -9.8A Gate-Source Charge Qgs 14.2 Gate-Drain Charge Qgd 13.5 Turn-On Delay Time tD(on) 13.2 ns VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A, RL = 20Ω Turn-On Rise Time tr 10 Turn-Off Delay Time tD(off) 302.7 Turn-Off Fall Time tf 137.9 Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7 .UIS in production with L = 1mH, TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. |
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