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DMP4025LSSQ Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP4025LSSQ
Descripción  40V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  7 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP4025LSSQ
Document Number: DS38881 Rev: 1 - 2
2 of 7
www.diodes.com
May 2016
© Diodes Incorporated
DMP4025LSSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
20
Continuous Drain Current
VGS = -10V
(Note 7)
ID
-8.0
A
TA = +70°C
(Note 7)
-6.9
(Note 6)
-6.0
Pulsed Drain Current
VGS = -10V
(Note 8)
IDM
-30
Continuous Source Current (Body Diode)
(Note 8)
IS
-8.0
Pulsed Source Current (Body Diode)
(Note 8)
ISM
-30
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
1.52
W
(Note 7)
2.4
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
82
°C/W
(Note 7)
52
Thermal Resistance, Junction to Lead
(Note 9)
RθJL
48.85
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
BVDSS
-40
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-1.0
µA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
VGS(TH)
-0.8
-1.3
-1.8
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance
RDS(ON)
18
25
m
VGS = -10V, ID = -3A
30
45
VGS = -4.5V, ID = -3A
Forward Transconductance
gFS
16.6
S
VDS = -5V, ID = -3A
Diode Forward Voltage
VSD
-0.7
-1.0
V
IS = -1A, VGS = 0V
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
CISS
1,640
pF
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
COSS
179
Reverse Transfer Capacitance
CRSS
128
Gate Resistance
RG

6.43

VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
QG

14.0

nC
VGS = -4.5V
VDS = -20V
ID = -3A
Total Gate Charge
QG
33.7
VGS = -10V
Gate-Source Charge
QGS
5.5
Gate-Drain Charge
QGD
7.3
Turn-On Delay Time
tD(ON)
6.9
ns
VDD = -20V, VGS = -10V
ID = -3A
Turn-On Rise Time
tR
14.7
Turn-Off Delay Time
tD(OFF)
53.7
Turn-Off Fall Time
tF
30.9
Notes:
6. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note (6), except the device is surface mounted on 25mm x 25mm x 1.6mm FR4 PCB.
8. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300µs
– pulse width by maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to production testing.




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