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DMP6023LE Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP6023LE
Descripción  60V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  7 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP6023LE
Document number: DS37199 Rev. 3 - 2
2 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMP6023LE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = -10V
TA = +25°C
TA = +70°C
ID
-7
-5.6
A
TC = +25°C
TC = +70°C
ID
-18.2
-14.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-50
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
-2
A
Avalanche Current, L = 0.1mH
IAS
-35.5
A
Avalanche Energy, L = 0.1mH
EAS
62.9
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
TA = +70°C
PD
2
1.3
W
Thermal Resistance, Junction to Ambient (Note 5)
RJA
60
°C/W
Total Power Dissipation (Note 5)
TC = +25°C
PD
17.3
W
Thermal Resistance, Junction to Case (Note 5)
RJC
7.2
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-60
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-1
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
-1
-3
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
28
mΩ
VGS = -10V, ID = -5A
35
VGS = -4.5V, ID = -4A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
2569
pF
VDS = -30V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
179
pF
Reverse Transfer Capacitance
Crss
143
pF
Gate Resistance
Rg
8
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
26.5
nC
VDS = -30V, ID = -5A
Total Gate Charge (VGS = -10V)
Qg
53.1
nC
Gate-Source Charge
Qgs
7.1
nC
Gate-Drain Charge
Qgd
12.6
nC
Turn-On Delay Time
tD(on)
6
ns
VGS = -10V, VDS = -30V,
RG = 3Ω, ID = -5A
Turn-On Rise Time
tr
7.1
ns
Turn-Off Delay Time
tD(off)
110
ns
Turn-Off Fall Time
tf
62
ns
Body Diode Reverse Recovery Time
trr
20
nS
IF = -5A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
14
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.




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