DMP6110SSD

Document number: DS37798 Rev. 4 - 2

2 of 8

www.diodes.com

June 2016

© Diodes Incorporated

DMP6110SSD

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

-7.8

-6.3

A

-3.3

-2.7

A

Pulsed Drain Current (380µs Pulse, 1% Duty Cycle)

-24

A

Maximum Continuous Body Diode Forward Current (Note 6)

-1.8

A

Avalanche Current (Note 9) L = 0.1mH

-19

A

Avalanche Energy (Note 9) L = 0.1mH

18

mJ

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5 & 7)

1.2

W

0.9

Total Power Dissipation (Note 5 & 8)

1.2

Thermal Resistance, Junction to Ambient (Note 5 & 7)

Steady State

104

°C/W

t<10s

45

Thermal Resistance, Junction to Ambient (Note 5 & 8)

Steady State

100

Total Power Dissipation (Note 6 & 7)

1.7

W

1.1

Total Power Dissipation (Note 6 & 8)

1.8

Thermal Resistance, Junction to Ambient (Note 6 & 7)

Steady State

74

°C/W

t<10s

37

Thermal Resistance, Junction to Ambient (Note 6 & 8)

Steady State

71

Thermal Resistance, Junction to Case (Note 6 & 7)

15

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. For a dual device with one active die.

8. For a device with two active die running at equal power.