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DMP6350S-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP6350S-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMP6350S Document number: DS38474 Rev. 3 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMP6350S Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6), VGS = -10V Steady State TA = +25°C TA = +70°C ID -1.5 -1.2 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -6 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 0.72 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RθJA 176 °C/W Power Dissipation (Note 6) PD 1.17 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RθJA 108 °C/W Thermal Resistance, Junction to Case RθJC 34 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -60 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - -1.0 μA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -1.0 -1.8 -3.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) - 257 343 350 550 m Ω VGS = -10V, ID = -0.9A VGS = -4.5V, ID = -0.8A Diode Forward Voltage VSD - -0.8 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 206 - pF VDS = -30V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 15 - pF Reverse Transfer Capacitance Crss - 11 - pF Gate Resistance Rg - 17 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg - 2.0 - nC VDS = -30V, ID = -0.9A Total Gate Charge (VGS = -10V) Qg - 4.1 - nC Gate-Source Charge Qgs - 0.5 - nC Gate-Drain Charge Qgd - 0.8 - nC Turn-On Delay Time tD(ON) - 3.6 - ns VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω Turn-On Rise Time tR - 3.8 - ns Turn-Off Delay Time tD(OFF) - 12.3 - ns Turn-Off Fall Time tF - 7.3 - ns Body Diode Reverse Recovery Time tRR - 8.2 - ns IS = -1.0A, di/dt = -100A/μs Body Diode Reverse Recovery Charge QRR - 2.7 - nC IS = -1.0A, di/dt = -100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
Número de pieza similar - DMP6350S-13 |
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Descripción similar - DMP6350S-13 |
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