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FDD8880 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD8880 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2004 Fairchild Semiconductor Corporation FDD8880 Rev. B1 Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Package current limitation is 35A. 2: Starting TJ = 25°C, L = 0.14mH, I AS = 28A, VDD = 27V, VGS = 10V. Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, V GS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 µA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, I D = 250µA 1.2 - 2.5 V rDS(ON) Drain to Source On Resistance ID = 35A, V GS = 10V - 0.007 0.009 Ω ID = 35A, V GS = 4.5V - 0.009 0.012 ID = 35A, V GS = 10V, TJ = 175 oC - 0.013 0.015 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 1260 - pF COSS Output Capacitance - 260 - pF CRSS Reverse Transfer Capacitance - 150 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 2.3 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V V DD = 15V ID = 35A Ig = 1.0mA - 23 31 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 13 17 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 1.3 1.7 nC Qgs Gate to Source Gate Charge - 3.8 - nC Qgs2 Gate Charge Threshold to Plateau - 2.5 - nC Qgd Gate to Drain “Miller” Charge - 5.0 - nC tON Turn-On Time VDD = 15V, I D = 35A VGS = 10V, R GS = 10Ω - - 147 ns td(ON) Turn-On Delay Time - 8 - ns tr Rise Time - 91 - ns td(OFF) Turn-Off Delay Time - 38 - ns tf Fall Time - 32 - ns tOFF Turn-Off Time - - 108 ns VSD Source to Drain Diode Voltage ISD = 35A - - 1.25 V ISD = 15A - - 1.0 V trr Reverse Recovery Time ISD = 35A, dISD /dt = 100A/µs - - 27 ns QRR Reverse Recovered Charge ISD = 35A, dISD /dt = 100A/µs - - 14 nC |
Número de pieza similar - FDD8880 |
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Descripción similar - FDD8880 |
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