LM4853

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SNAS155E – JANUARY 2002 – REVISED MAY 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

6.0V

Storage Temperature

−65°C to +150°C

3.5kV

250V

150°C

Solder Information

Small Outline Package

Vapor Phase (60 sec.)

215°C

Infrared (15 sec.)

220°C

194°C/W

52°C/W

Thermal Resistance

(5)

56°C/W

4.3°C/W

(1)

Absolute Maximum Rating indicate limits beyond which damage to the device may occur.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3)

Human body model, 100pF discharged through a 1.5k

Ω resistor.

(4)

Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage, then

discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50

Ω).

(5)

The given

Operating Ratings

(1)

Temperature Range

−40°C ≤ to 85°C

2.4V

(1)

Absolute Maximum Rating indicate limits beyond which damage to the device may occur.

Electrical Characteristics

(1) (2)

Symbol

Parameter

Conditions

LM4853

Units

(Limits)

Supply Voltage

2.4

V (min)

5.5

V (max)

Supply Current

2.4

7.0

mA

2.4

7.0

mA

Shutdown Current

18

µA

Output Offset Voltage

5.0

40

mV

BTL OUT+ to BTL OUT

−

(1)

Absolute Maximum Rating indicate limits beyond which damage to the device may occur.

(2)

All voltages are measured with respect to the ground pin, unless otherwise specified.

(3)

Typical specifications are specified at +25°C and represent the most likely parametric norm.

(4)

Datasheet min/max specification limits are ensured by design, test, or statistical analysis.

(5)

Limits are specified to TI's AOQL ( Average Outgoing Quality Level ).

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