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LM614IWM Datasheet(PDF) 3 Page - Texas Instruments |
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LM614IWM Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 26 page  LM614 www.ti.com SNOSC21C – MAY 1998 – REVISED MARCH 2013 Electrical Characteristics (continued) These specifications apply for V − = GND = 0V, V+ = 5V, V CM = VOUT = 2.5V, IR = 100μA, FEEDBACK pin shorted to GND, unless otherwise specified. Limits in standard typeface are for TJ = 25°C; limits in Boldface type apply over the Operating Temperature Range. Symbol Parameter Conditions Typ(1) LM614I Units LM614C Limits(2) IOS1 Average Offset 4 pA/°C ΔT Drift Current RIN Input Resistance Differential 1800 M Ω Common-Mode 3800 M Ω CIN Input Capacitance Common-Mode Input 5.7 pF en Voltage Noise f = 100 Hz, Input Referred 74 nV/ √Hz In Current Noise f = 100 Hz, Input Referred 58 fA/ √Hz CMRR Common-Mode V + = 30V, 0V ≤ VCM ≤ (V + − 1.8V), 95 75 dB min Rejection Ratio CMRR = 20 log ( ΔVCM/ΔVOS) 90 70 dB min PSRR Power Supply 4V ≤ V+ ≤ 30V, VCM = V +/2, 110 75 dB min Rejection Ratio PSRR = 20 log ( ΔV+/ΔVOS) 100 70 dB min A V Open Loop R L = 10 kΩ to GND, V + = 30V, 500 94 V/mV Voltage Gain 5V ≤ VOUT ≤ 25V 50 40 min SR Slew Rate V + = 30V(3) ±0.70 ±0.50 V/ μs ±0.65 ±0.45 GBW Gain Bandwidth C L = 50 pF 0.8 MHz 0.52 MHz VO1 Output Voltage R L = 10 kΩ to GND V + − 1.4 V + − 1.8 V min Swing High V + = 36V (32V for LM614C) V+ − 1.6 V+ − 1.9 V min VO2 Output Voltage R L = 10 kΩ to V + V − + 0.8 V − + 0.95 V max Swing Low V + = 36V (32V for LM614C) V− + 0.9 V− + 1.0 V max IOUT Output Source V OUT = 2.5V, V+IN = 0V, 25 16 mA min V −IN = −0.3V 15 13 mA min I SINK Output Sink V OUT = 1.6V, V+IN = 0V, 17 13 mA min Current V −IN = 0.3V 9 8 mA min ISHORT Short Circuit Current V OUT = 0V, V+IN = 3V, 30 50 mA max V −IN = 2V, Source 40 60 mA max V OUT = 5V, V+IN = 2V, 30 70 mA max V −IN = 3V, Sink 32 90 mA max VOLTAGE REFERENCE VR Voltage Reference See (4) 1.244 1.2191 V min 1.2689 V max (±2.0%) ΔVR Average Temperature Drift See (5) 10 150 PPM/°C ΔT max ΔVR Hysteresis See (6) 3.2 μV/°C ΔTJ V R Change V R(100 μA) − VR(17 μA) 0.05 1 mV max with Current 0.1 1.1 mV max ΔVR ΔIR VR(10 mA) − VR(100 μA) (7) 1.5 5 mV max 2.0 5.5 mV max (3) Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage transition is sampled at 10V and @20V. For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V and 10V. (4) VR is the Cathode-feedback voltage, nominally 1.244V. (5) Average reference drift is calculated from the measurement of the reference voltage at 25°C and at the temperature extremes. The drift, in ppm/°C, is 106• ΔV R/(VR[25°C] •ΔTJ), where ΔV R is the lowest value subtracted from the highest, VR[25°C] is the value at 25°C, and ΔTJ is the temperature range. This parameter is ensured by design and sample testing. (6) Hysteresis is the change in VR caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25°C: 25°C, 85°C, −40°C, 70°C, 0°C, 25°C. (7) Low contact resistance is required for accurate measurement. Copyright © 1998–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM614 |
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