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LSCP10C60 Datasheet(Hoja de datos) 1 Page - SemiWell Semiconductor

No. de Pieza. LSCP10C60
Descripción  Silicon Controlled Rectifiers
Descarga  5 Pages
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Fabricante  SEMIWELL [SemiWell Semiconductor]
Página de inicio  http://www.semiwellsemi.co.kr
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Absolute Maximum Ratings ( T
J = 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(AV)
Average On-State Current
Half Sine Wave : TC = 111 °C
6.4
A
IT(RMS)
R.M.S On-State Current
180° Conduction Angle
10
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
110
A
I2t
I2t for Fusing
t = 8.3ms
60
A2s
di/dt
Critical rate of rise of on-state current
50
A/
PGM
Forward Peak Gate Power Dissipation
5
W
PG(AV)
Forward Average Gate Power Dissipation
0.5
W
IFGM
Forward Peak Gate Current
2
A
VRGM
Reverse Peak Gate Voltage
5.0
V
TJ
Operating Junction Temperature
- 40 ~ 125
°C
TSTG
Storage Temperature
- 40 ~ 150
°C
SCP10C60
Aug, 2003. Rev. 3
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 10 A )
Low On-State Voltage (1.4V(Typ.)@ ITM)
Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
3. Gate
1. Cathode
Symbol
1/5
SemiWell Semiconductor
Silicon Controlled Rectifiers
TO-220
1
2
3
2. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.




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