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LM9061QDQ1 Datasheet(PDF) 11 Page - Texas Instruments

No. de pieza LM9061QDQ1
Descripción Electrónicos  High-Side Protection Controller
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LM9061QDQ1 Datasheet(HTML) 11 Page - Texas Instruments

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LM9061, LM9061-Q1
www.ti.com
SNOS738H – APRIL 1995 – REVISED JANAURY 2015
7 Detailed Description
7.1 Overview
The LM9061 is a high-side controller that can protect the load from overcurrent and overvoltage. An internal
charge pump circuit generates the gate voltage to drive the high-side MOSFET. The voltage drop, VDS, across
the MOSFET is monitored to protect from excessive current. Should the VDS voltage, due to excessive load
current, exceed the threshold voltage, the output is latched OFF after a programmable delay time interval.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 MOSFET Gate Drive
The LM9061 contains a charge pump circuit that generates a voltage in excess of the applied supply voltage to
provide the gate drive to high-side MOSFET transistors. Any size of N-channel power MOSFET, including
multiple parallel connected MOSFETs for very high current applications, can be used to apply power to a ground
referenced load circuit in what is referred to as “high-side drive” applications. Figure 12 shows the basic
application of the LM9061.
Copyright © 1995–2015, Texas Instruments Incorporated
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Product Folder Links: LM9061 LM9061-Q1


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