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LS842 Datasheet(PDF) 1 Page - Linear Integrated Systems |
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LS842 Datasheet(HTML) 1 Page - Linear Integrated Systems |
1 / 2 page Linear Integrated Systems Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 1 7 35 BOTTOM VIEW 2 6 31 X 32 MILS D1 G1 S2 S1 G2 D2 FEATURES LOW NOISE e n = 8nV/ √Hz TYP. LOW LEAKAGE I G = 10pA TYP. LOW DRIFT | ∆V GS1-2 / ∆T|= 5µV/°C max. LOW OFFSET VOLTAGE IV GS1-2 I= 2mV TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -65 ° to +150°C Operating Junction Temperature +150 °C Maximum Voltage and Current for Each Transistor NOTE 1 -V GSS Gate Voltage to Drain or Source 60V -V DSO Drain to Source Voltage 60V -I G(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air - Total 400mW @ +125 °C G1 S2 S1 G2 D1 D2 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise noted) SYMBOL CHARACTERISTICS LS840 LS841 LS842 UNITS CONDITIONS | ∆V GS1-2 / ∆T| max. Drift vs. Temperature 5 10 40 µV/°C V DG = 20V I D = 200 µA T A = -55 °C to +125°C |V GS1-2 | max. Offset Voltage 5 10 25 mV V DG = 20V I D = 200 µA LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BV GSS Breakdown Voltage 60 -- -- V V DS = 0 I D = 1nA BV GGO Gate-to-Gate Breakdown 60 -- -- V I G = 1nA I D = 0 I S = 0 TRANSCONDUCTANCE Y fss Full Conduction 1000 4000 µmho V DG = 20V V GS = 0 f= 1kHz Y fs Typical Conduction 500 1000 µmho V DG = 20V I D = 200 µA |Y fs1-2 /Y fs | Mismatch -- 0.6 3 % DRAIN CURRENT I DSS Full Conduction 0.5 2 5 mA V DG = 20V V GS = 0 |I DSS1-2 /I DSS | Mismatch at Full Conduction -- 1 5 % GATE VOLTAGE V GS (off) or V P Pinchoff Voltage 1 2 4.5 V V DS = 20V I D = 1nA V GS Operating Range 0.5 -- 4 V V DS = 20V I D = 200 µA GATE CURRENT -I G Operating -- 10 50 pA V DG = 20V I D = 200 µA -I G High Temperature -- -- 50 nA V DG = 20V I D = 200 µAT A = +125 °C -I G Reduced VDG -- 5 -- pA V DG = 10V I D = 200 µA -I GSS At Full Conduction -- -- 100 pA V DG = 20V V DS = 0 |
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