OUTPUT

GND

INPUT

- +

2.2k

2.2PF

-

+

DIAPHRAGM

AIRGAP

BACKPLATE

ELECTRET

CONNECTOR

LMV1015

x

x

x

x

x

x

x

x

xxx

x

xx

xx

IC

LMV1015

www.ti.com

SNAS291B – MARCH 2005 – REVISED APRIL 2013

LMV1015 Analog Series: Built-in Gain IC's for High Sensitivity 2-Wire Microphones

Check for Samples: LMV1015

1

FEATURES

DESCRIPTION

The LMV1015 is an audio amplifier series for small

2

•

form factor electret microphones. This 2-wire portfolio

C = 2.2

is designed to replace the JFET amplifier. The

specified)

LMV1015 series is ideally suited for applications

•

Supply Voltage: 2V - 5V

requiring high signal integrity in the presence of

ambient

or

RF

noise,

such

as

in

cellular

•

Supply Current: <180

μA

communications. The LMV1015 audio amplifiers are

•

Signal to Noise Ratio (A-Weighted): 60 dB

ensured to operate over a 2.2V to 5.0V supply

•

Output Voltage Noise (A-Weighted):

−89 dBV

voltage range with fixed gains of 15.6 dB and 23.8

•

Total Harmonic Distortion 0.09%

dB. The devices offer excellent THD, gain accuracy

and temperature stability as compared to a JFET

•

Voltage Gain

microphone.

–

LMV1015-15: 15.6 dB

The LMV1015 series enables a two-pin electret

–

LMV1015-25: 23.8 dB

microphone solution, which provides direct pin-to-pin

•

Temperature Range:

−40°C to 85°C

compatibility with the existing older JFET market.

•

Large Dome 4-Bump DSBGA Package with

Texas Instruments' built-in gain families are offered in

Improved Adhesion Technology.

extremely

thin

space

saving

4-bump

DSBGA

packages (0.3 mm maximum). The LMV1015XR is

APPLICATIONS

designed for 1.0 mm ECM canisters and thicker.

These extremely miniature packages have the Large

•

Cellular Phones

Dome

Bump

(LDB)

technology.

This

DSBGA

•

Headsets

technology

is

designed

for

microphone

PCBs

•

Mobile Communications

requiring 1 kg adhesion criteria.

•

Automotive Accessories

•

PDAs

•

Accessory Microphone Products

Schematic Diagram

Built-In Gain Electret Microphone

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2005–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.