LMS4684LD datasheet(2/10 Pages) NSC

No. de pieza	LMS4684LD

Descripción Electrónicos	0.5 Low-Voltage, Dual SPDT Analog Switch

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Fabricante Electrónico	NSC [National Semiconductor (TI)]

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

V

+, IN

−0.3V to 6.0V

COM, NO, NC

−0.3V to (V

+ + 0.3V)

Continuous Current NO, NC,

COM

±400mA

ESD Tolerance (Note 2)

Human Body Model

2000V

Machine Model

200V

Storage Temperature Range

−65˚C to 150˚C

Junction Temperature (Note 3)

150˚C Max

Operating Ratings

Nominal Supply Voltage

1.8V to 5.5V

Temperature Range

−40˚C to 85˚C

Thermal Resistance

θ

JA

LLP-10

TBD

micro SMD-12

TBD

Electrical Characteristics

Unless otherwise specified, V

+ = 2.7 to 3.3V, V

IH = 1.4V, VIL = 0.5V. Typical values are measured at 3V, and TJ = 25˚C.

Boldface limits apply at temperature extremes.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

V

NO,

V

NC,

V

COM

Analog Signal Range

0

V

+

V

R

ON (NC)

NC-On-Resistance (Note 4)

V

+ =2.7, I

COM =100ma,

V

NC =0 to V

+

0.3

0.5

Ω

R

ON (NO)

NO-On-Resistance (Note 4)

V

+ =2.7, I

COM =100ma,

V

NO =0 to V

+

0.45

0.8

Ω

∆R

ON

On-Resistance Match Between

Channels (Note 4), (Note 5)

V

+ =2.7, I

COM =100ma,

V

NC or VNO =1.5V

0.06

Ω

R

FLAT(NC) NC-On-Resistance Flatness (Note 6)

V

+ =2.7V,

I

COM =100mA,

V

NC =0 to V

+

LLP

T

J =0˚C to 85˚C

0.15

Ω

micro SMD

T

J =0˚C to 85˚C

0.17

LLP

T

J = −40˚C to +85˚C

0.18

micro SMD

T

J = −40˚C to +85˚C

0.20

R

FLAT(NO) NO-On Resistance Flatness (Note 6)

V

+ =2.7V, I

COM =100mA,

V

NO = 0 to V

+

0.35

Ω

I

NO(OFF)

or

I

NC(OFF)

NO or NC Off-Leakage Current

V

+ =3.3V, V

NO or VNC =3V,

0.3V; V

COM =0.3V, 3V

−1

1

nA

−10

10

I

COM

(ON)

COM On-Leakage Current

V

+ =3.3V, V

NO or VNC =3V,

0.3V, or floating; V

COM =3V, or floating

−2

2

nA

−20

20

Dynamic Characteristics

t

ON

Turn-On Time

V

+ =2.7V, V

NO or VNC =1.5V;

R

L =50

Ω;C

L =35pF;

35

55

ns

65

t

OFF

Turn-Off Time

V

+ =2.7V, V

NO or VNC =1.5V;

R

L =50

Ω;C

L =35pF;

25

30

ns

40

t

BBM

Break-Before-Make-Delay

V

+ =2.7V, V

NO or VNC =1.5V;

R

L =50

Ω;C

L =35pF;

2

15

ns

Q

Charge Injection

COM =0; R

S =0; CL= 1nF;

200

pC

Digital I/O

V

IH

Input Logic High

1.4

V

IL

Input Logic Low

0.5

V

I

IN

IN Input Leakage Current

V

IN =0 or V

+

−1

1

µA

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