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SB240 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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SB240 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Metal-Sem iconductor junction with guard ring Epitaxial cons truction Low forward voltage drop,low s witching loss es High s urge capability MECHANICAL DATA Cas e:JEDEC DO--15,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces ,0.39 gram s Mounting pos ition: Any Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%. SB230 SB240 SB250 SB260 UNITS Maximum recurrent peak reverse voltage VRRM 30 40 50 60 V Maximum RMS voltage VRMS 21 28 35 42 V Maximum DC blocking voltage VDC 30 40 50 60 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @T J=125 Maximum instantaneous f orw ard voltage @ 2.0A (Note1) VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG Note: 1. Pulse test : 300 s pulse width,1% duty cy cle. SB220 --- SB260 A For us e in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications IF(AV) SCHOT TKY BARRIER RECT IFIERS VOLTAGE RANGE: 20 --- 60V CURRENT: 2.0 A DO - 15 3.Thermal resistance junction to ambient. mA IR IFSM 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. A 35 0.55 - 55 ---- + 150 20 The plas tic m aterial carries U/L recognition 94V-0 20 SB220 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 14 - 55 ---- + 125 50.0 170 2.0 20.0 0.5 0.70 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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