SI1905DL datasheet(2/4 Pages) VISHAY

No. de pieza	SI1905DL

Descripción Electrónicos	Dual P-Channel 1.8-V (G-S) MOSFET

Download	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VISHAY [Vishay Siliconix]

Página de inicio	http://www.vishay.com

Logo

2 / 4 page

Si1905DL

Vishay Siliconix

New Product

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 71082

S-99188—Rev. A, 01-Nov-99

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –6.4 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –6.4 V, VGS = 0 V, TJ = 85_C

–5

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–1.0

A

DiS

OS

R

i

a

VGS = –4.5 V, ID = –0.57 A

0.51

0.600

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –0.48 A

0.720

0.850

W

VGS = –1.8 V, ID = –0.20 A

1.0

1.200

Forward Transconductancea

gfs

VDS = –10 V, ID = –0.57 A

1.2

S

Diode Forward Voltagea

VSD

IS = –0.23 A, VGS = 0 V

–0.8

–1.2

V

Dynamicb

Total Gate Charge

Qg

V

4 V V

45 V I

057 A

1.5

2.3

C

Gate-Source Charge

Qgs

VDS = –4 V, VGS = –4.5 V, ID = –0.57 A

0.17

nC

Gate-Drain Charge

Qgd

0.16

Turn-On Delay Time

td(on)

V4 V R

8

W

6

12

Rise Time

tr

VDD = –4 V, RL = 8 W

I0 5 A V

4 5 V R

6

W

25

50

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W

10

20

ns

Fall Time

tf

10

20

Source-Drain Reverse Recovery Time

trr

IF = –0.23 A, di/dt = 100 A/ms

20

40

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

0.2

0.4

0.6

0.8

1.0

0

0.5

1.0

1.5

2.0

2.5

0

0.2

0.4

0.6

0.8

1.0

0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 2.5 V

TC = –55_C

125

_C

2 V

25

_C

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

1.5 V

1 V

Número de pieza similar - SI1905DL

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI1905DL	100Kb / 5P	Dual P-Channel 1.8 V (G-S) MOSFET 18-Jul-08
Vishay Siliconix	SI1905DL	100Kb / 5P	Dual P-Channel 1.8 V (G-S) MOSFET 18-Jul-08

More results

Descripción similar - SI1905DL

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI6973DQ	66Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 22-May-00
	SI4965DY	62Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. B, 13-Oct-03
	SI4967DY	62Kb / 4P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. C, 13-Oct-03
	SI5935DC	73Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. A, 16-Jun-03
	SI5935DC-T1-E3	233Kb / 10P	Dual P-Channel 1.8 V (G-S) MOSFET Rev. C, 19-Apr-10
Guangdong Kexin Industr...	KI5935DC	66Kb / 2P	Dual P-Channel 1.8-V (G-S) MOSFET
Vishay Siliconix	SI6967DQ-T1-E3	216Kb / 10P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. D, 02-Jun-08
	SI4967DY	103Kb / 5P	Dual P-Channel 1.8-V (G-S) MOSFET 01-Jan-2022
	SI5905DC	112Kb / 5P	Dual P-Channel 1.8 V (G-S) MOSFET
	SI1907DL	202Kb / 3P	Dual P-Channel 1.8-V (G-S) MOSFET Rev. B, 28-Feb-05

More results

SI1905DL Datasheet(PDF) 2 Page - Vishay Siliconix

SI1905DL Datasheet(HTML) 2 Page - Vishay Siliconix

Número de pieza similar - SI1905DL

Descripción similar - SI1905DL

Html Pages

1 2 3 4

Datasheet Descarga

Enlace URL