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SD103BW Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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SD103BW Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 3 page Schottky Barrier Diode SD103AW/SD103BW/SD103CW FEATURES Low Forward Voltage Drop. Pb Lead-free Guard Ring Construction For Transient Protection. Negligible Reverse Recovery Time. Low Reverse Capacitance. APPLICATIONS Schotty barrier switching. SOD-123 ORDERING INFORMATION Type No. Marking Package Code SD103AW S4 SOD-123 SD103BW S5 SOD-123 SD103CW S6 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol SD103AW SD103BW SD103CW Unit Peak Repetitive Peak reverse voltage Working Peak DC Reverse Voltage VRR VRWM VR 40 30 20 V RMS Reverse Voltage VR(RMS) 28 21 14 V Forward Continuous Current IF 350 mA Repetitive Peak Forward Current @t≤1.0s IFRM 1.5 A Power Dissipation Pd 400 mW Thermal Resistance Junction to Ambient RθjA 300 ℃/W Storage temperature Tstg -65~+125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Diode Semiconductor Korea www.diode.kr |
Número de pieza similar - SD103BW |
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Descripción similar - SD103BW |
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