Motor de Búsqueda de Datasheet de Componentes Electrónicos
Selected language     Spanish  ▼

Delete All
ON OFF
ALLDATASHEET.ES

X  

Preview PDF Download HTML

TPS62305YZDT Datasheet(PDF) 3 Page - Texas Instruments

No. de Pieza. TPS62305YZDT
Descripción  500-mA, 3-MHz SYNCHRONOUS STEP-DOWN CONVERTER IN CHIP SCALE PACKAGING
Descarga  31 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  TI [Texas Instruments]
Página de inicio  http://www.ti.com
Logo 

TPS62305YZDT Datasheet(HTML) 3 Page - Texas Instruments

 
Zoom Inzoom in Zoom Outzoom out
 3 / 31 page
background image
www.ti.com
DISSIPATION RATINGS
(1)
ELECTRICAL CHARACTERISTICS
TPS62300, TPS62301, TPS62302
TPS62303, TPS62305, TPS62311
TPS62313, TPS62320, TPS62321
SLVS528B – JULY 2004 – REVISED JUNE 2005
POWER RATING
DERATING FACTOR
PACKAGE
RθJA
FOR TA≤ 25°C
ABOVE TA = 25°C
DRC
49
°C/W
2050 mW
21 mW/
°C
YZD
250
°C/W
400 mW
4 mW/
°C
YED
250
°C/W
400 mW
4 mW/
°C
(1)
Maximum power dissipation is a function of TJ(max), θJA and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = [TJ(max)-TA] / θJA
V
I = 3.6 V, VO = 1.6 V, EN = VI, MODE/SYNC = GND, L = 1 µH, CO = 10 µF, TA = -40°C to 85°C, typical values are at
T
A = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
VI
Input voltage range
2.7
6
V
TPS6230x
IO = 0 mA. PFM mode enabled, device not switching
86
105
µA
TPS6232x
Operating
TPS6231x
IO = 0 mA. PFM mode enabled, device not switching
86
120
µA
IQ
quiescent
current
TPS6230x
IO = 0 mA. Switching with no load
TPS6231x
3.6
mA
(MODE/SYNC = VIN)
TPS6232x
I(SD)
Shutdown current
EN = GND
0.1
1
µA
TPS6230x
2.40
2.55
V
Undervoltage
TPS6232x
V(UVLO)
lockout threshold
TPS6231x
2.00
2.20
V
ENABLE, MODE/SYNC
V(EN)
EN high-level input voltage
1.2
V
V(MODE/SYNC)
MODE/SYNC high-level input voltage
1.3
V
V(EN),
EN, MODE/SYNC low-level input
0.4
V
V(MODE/SYNC)
voltage
I(EN),
EN, MODE/SYNC input leakage
EN, MODE/SYNC = GND or VIN
0.01
1
µA
I(MODE/SYNC)
current
POWER SWITCH
VI = V(GS) = 3.6 V
420
750
m
rDS(on)
P-channel MOSFET on resistance
VI = V(GS) = 2.8 V
520
1000
m
Ilkg(PMOS)
P-channel leakage current
V(DS) = 6 V
1
µA
VI = V(GS) = 3.6 V
330
750
m
rDS(on)
N-channel MOSFET on resistance
VI = V(GS) = 2.8 V
400
1000
m
Discharge resistor for power-down
R(DIS)
30
50
sequence (TPS6232x only)
Ilkg(NMOS)
N-channel leakage current
V(DS) = 6 V
1
µA
P-MOS current limit
2.7 V
≤ V
I ≤ 6 V
670
780
890
mA
N-MOS current limit - sourcing
2.7 V
≤ V
I ≤ 6 V
550
720
890
mA
N-MOS current limit - sinking
2.7 V
≤ V
I ≤ 6 V
–460
–600
–740
mA
Input current limit under short-circuit
VO = 0 V
390
mA
conditions
Thermal shutdown
150
°C
Thermal shutdown hysteresis
20
°C
3


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31 


Datasheet Download




Enlace URL




Privacy Policy
ALLDATASHEET.ES
Does ALLDATASHEET help your business so far?  [ DONATE ]  

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Favorito   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn