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BUK7526-100B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK7526-100B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 15 page Philips Semiconductors BUK75/7626-100B TrenchMOS™ standard level FET Product data Rev. 01 — 11 April 2003 5 of 15 9397 750 11238 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 5. Characteristics Table 4: Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C 100 - - V Tj = −55 °C89 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C2 3 4 V Tj = 175 °C1 - - V Tj = −55 °C - - 4.4 V IDSS drain-source leakage current VDS = 100 V; VGS =0V Tj =25 °C - 0.02 1 µA Tj = 175 °C - - 500 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Figure 7 and 8 Tj =25 °C - 22 26 m Ω Tj = 175 °C- - 65 m Ω Dynamic characteristics Qg(tot) total gate charge VGS =10V; VDD =80V; ID =25A; Figure 14 -38 - nC Qgs gate-source charge - 9 - nC Qgd gate-drain (Miller) charge - 13 - nC Ciss input capacitance VGS =0V; VDS =25V; f = 1 MHz; Figure 12 - 2168 2891 pF Coss output capacitance - 238 286 pF Crss reverse transfer capacitance - 102 140 pF td(on) turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS =10V; RG =10 Ω -21 - ns tr rise time - 40 - ns td(off) turn-off delay time - 47 - ns tf fall time - 19 - ns Ld internal drain inductance from drain lead 6 mm from package to centre of die - 4.5 - nH from contact screw on mounting base to centre of die SOT78 - 3.5 - nH from upper edge of drain mounting base to centre of die SOT404 - 2.5 - nH Ls internal source inductance from source lead 6 mm from package to source bond pad - 7.5 - nH |
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