©2003 Fairchild Semiconductor Corporation

Rev. A, December 2003

FQP15P12/FQPF15P12

120V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• Low gate charge ( typical 29 nC)

• Low Crss ( typical 110 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175

°C maximum junction temperature rating

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

FQP15P12

FQPF15P12

Units

Drain-Source Voltage

-120

V

Drain Current

-15

-15 *

A

-10.6

-10.6 *

A

Drain Current

- Pulsed

(Note 1)

-60

-60 *

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

1157

mJ

Avalanche Current

(Note 1)

-15

A

Repetitive Avalanche Energy

(Note 1)

10

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

-5.0

V/ns

100

41

W

- Derate above 25°C

0.67

0.27

W/°C

Operating and Storage Temperature Range

-55 to +175

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

FQP15P12

FQPF15P12

Units

Thermal Resistance, Junction-to-Case

1.5

3.66

°C/W

Thermal Resistance, Case-to-Sink Typ.

40

--

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W

TO-220

FQP Series

G

S

D

TO-220F

FQPF Series

G

S

D

●

●

●

●

●

●

●

●

●

●

●

●

▲

▲

▲

▲

▶

▶

▶

▶

!

!

!

!

!

!

!

!

!

!

!

!

●

●

●

●

●

●

●

●

●

●

●

●

▲

▲

▲

▲

▶

▶

▶

▶

!

!

!

!

!

!

!

!

!

!

!

!

S

D

G