4

TPD1E0B04

SLVSDG9A – MARCH 2016 – REVISED JUNE 2016

www.ti.com

Product Folder Links: TPD1E0B04

Submit Documentation Feedback

Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Electrical fast transient

IEC 61000-4-5 (5/50 ns)

80

A

Peak pulse

15

W

1.7

A

Operating free-air temperature

–40

125

°C

Storage temperature

–65

155

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±2500

V

±1000

6.3 ESD Ratings—IEC Specification

VALUE

UNIT

Electrostatic

discharge

IEC 61000-4-2 contact discharge

±8000

V

IEC 61000-4-2 air-gap discharge

±9000

6.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Input pin voltage

–3.6

3.6

V

Operating free-air temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.5 Thermal Information

TPD1E0B04

UNIT

DPL (X2SON)

2 PINS

Junction-to-ambient thermal resistance

582

°C/W

Junction-to-case (top) thermal resistance

264.5

°C/W

Junction-to-board thermal resistance

394.4

°C/W

Junction-to-top characterization parameter

36.4

°C/W

Junction-to-board characterization parameter

394.4

°C/W

Junction-to-case (bottom) thermal resistance

n/a

°C/W