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TPD1E1B04DPYR Datasheet(PDF) 10 Page - Texas Instruments

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No. de pieza TPD1E1B04DPYR
Descripción Electrónicos  1-Channel ESD Protection Diode with Low R(DYN) and Low Clamping Voltage
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

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5-V Source
USB Transceiver
VBUS
D-
D+
GND
2
1
2
1
Copyright © 2016, Texas Instruments Incorporated
10
TPD1E1B04
SLVSDL0A – MAY 2016 – REVISED JULY 2016
www.ti.com
Product Folder Links: TPD1E1B04
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPD1E1B04 is a diode type TVS which is used to provide a path to ground for dissipating ESD events on
high-speed signal lines between a human interface connector and a system. As the current from ESD passes
through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the
protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.
8.2 Typical Application
Figure 11. USB 2.0 ESD Schematic
8.2.1 Design Requirements
For this design example, two TPD1E1B04 devices are being used in a USB 2.0 application. This provides a
complete ESD protection scheme.
Given the USB 2.0 application, the parameters listed in Table 1 are known.
Table 1. Design Parameters
DESIGN PARAMETER
VALUE
Signal range on DP-DM lines
0 V to 3.6 V
Operating frequency on DP-DM lines
up to 240 MHz
8.2.2 Detailed Design Procedure
8.2.2.1 Signal Range
The TPD1E1B04 supports signal ranges between –3.6 V and 3.6 V, which supports the USB 2.0 signal pair on
the USB 2.0 application.


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