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TPD3S014TDBVRQ1 Datasheet(PDF) 5 Page - Texas Instruments |
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TPD3S014TDBVRQ1 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 28 page 5 TPD3S014-Q1 www.ti.com SLVSDG5B – MARCH 2016 – REVISED APRIL 2016 Product Folder Links: TPD3S014-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.6 Thermal Information THERMAL METRIC(1) TPD3S014-Q1 UNIT DBV (SOT-23) 6 PINS RθJA Junction-to-ambient thermal resistance 185.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 124.7 °C/W RθJB Junction-to-board thermal resistance 32.0 °C/W ψJT Junction-to-top characterization parameter 23.7 °C/W ψJB Junction-to-board characterization parameter 31.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W RθJA (Custom) See the Power Dissipation and Junction Temperature section 120.3 °C/W (1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature (2) See the Current Limit for explanation of this parameter. (3) These Parameters are provided for reference only, and do not constitute a part of TI’s published device specifications for purposes of TI’s product warranty. (4) RDYN was extracted using the least squares first of the TLP characteristics between I = 20 A and I = 30 A. 6.7 Electrical Characteristics: TJ = TA = 25°C VIN = 5 V, VEN = VIN, IOUT = 0 A (unless otherwise noted). Parameters over a wider operational range are shown in Electrical Characteristics: –40°C ≤ TA ≤ 105°C table. PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT POWER SWITCH RDS(on) Input – Output resistance 97 120 m Ω –40°C ≤ (TJ, TA) ≤ +85°C 97 140 CURRENT LIMIT IOS (2) Current limit, see Figure 23 0.67 0.85 1.01 A SUPPLY CURRENT ISD Supply current, switch disabled IOUT = 0 A 0.02 1 µA –40°C ≤ (TJ, TA) ≤ +85°C, VIN = 5.5 V, IOUT = 0 A 2 ISE Supply current, switch enabled IOUT = 0 A 66 74 µA –40°C ≤ (TJ, TA) ≤ +85°C, VIN = 5.5 V, IOUT = 0 A 85 IREV Reverse leakage current VOUT = 5 V, VIN = 0 V, Measure IVOUT 0.2 1 µA –40°C ≤ (TJ, TA) ≤ +85°C, VOUT = 5 V, VIN = 0 V, Measure IVOUT 5 OUTPUT DISCHARGE RPD Output pull-down resistance(3) VIN = VOUT = 5 V, disabled 400 456 600 Ω ESD PROTECTION ΔCIO Differential capacitance between the D1, D2 lines ƒ = 1 MHz, VIO = 2.5 V 0.02 pF CIO (D1, D2 to GND) ƒ = 1 MHz, VIO = 2.5 V 1.4 pF RDYN Dynamic on-resistance D1, D2 IEC clamps(4) Dx to GND 0.2 Ω GND to Dx 0.2 Ω |
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