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TPD3S014TDBVRQ1 Datasheet(PDF) 5 Page - Texas Instruments

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No. de pieza TPD3S014TDBVRQ1
Descripción Electrónicos  Current Limit Switch and D/D??ESD Protection for Automotive USB Host Ports
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

TPD3S014TDBVRQ1 Datasheet(HTML) 5 Page - Texas Instruments

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5
TPD3S014-Q1
www.ti.com
SLVSDG5B – MARCH 2016 – REVISED APRIL 2016
Product Folder Links: TPD3S014-Q1
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.6 Thermal Information
THERMAL METRIC(1)
TPD3S014-Q1
UNIT
DBV (SOT-23)
6 PINS
RθJA
Junction-to-ambient thermal resistance
185.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
124.7
°C/W
RθJB
Junction-to-board thermal resistance
32.0
°C/W
ψJT
Junction-to-top characterization parameter
23.7
°C/W
ψJB
Junction-to-board characterization parameter
31.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
RθJA (Custom)
See the Power Dissipation and Junction Temperature section
120.3
°C/W
(1)
Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2)
See the Current Limit for explanation of this parameter.
(3)
These Parameters are provided for reference only, and do not constitute a part of TI’s published device specifications for purposes of
TI’s product warranty.
(4)
RDYN was extracted using the least squares first of the TLP characteristics between I = 20 A and I = 30 A.
6.7 Electrical Characteristics: TJ = TA = 25°C
VIN = 5 V, VEN = VIN, IOUT = 0 A (unless otherwise noted). Parameters over a wider operational range are shown in Electrical
Characteristics: –40°C ≤ TA ≤ 105°C table.
PARAMETER
TEST CONDITIONS(1)
MIN
TYP
MAX
UNIT
POWER SWITCH
RDS(on)
Input – Output resistance
97
120
m
Ω
–40°C
≤ (TJ, TA) ≤ +85°C
97
140
CURRENT LIMIT
IOS
(2)
Current limit, see Figure 23
0.67
0.85
1.01
A
SUPPLY CURRENT
ISD
Supply current, switch disabled
IOUT = 0 A
0.02
1
µA
–40°C
≤ (TJ, TA) ≤ +85°C, VIN = 5.5 V, IOUT = 0 A
2
ISE
Supply current, switch enabled
IOUT = 0 A
66
74
µA
–40°C
≤ (TJ, TA) ≤ +85°C, VIN = 5.5 V, IOUT = 0 A
85
IREV
Reverse leakage current
VOUT = 5 V, VIN = 0 V, Measure IVOUT
0.2
1
µA
–40°C
≤ (TJ, TA) ≤ +85°C, VOUT = 5 V, VIN = 0 V,
Measure IVOUT
5
OUTPUT DISCHARGE
RPD
Output pull-down resistance(3)
VIN = VOUT = 5 V, disabled
400
456
600
Ω
ESD PROTECTION
ΔCIO
Differential capacitance between
the D1, D2 lines
ƒ = 1 MHz, VIO = 2.5 V
0.02
pF
CIO
(D1, D2 to GND)
ƒ = 1 MHz, VIO = 2.5 V
1.4
pF
RDYN
Dynamic on-resistance D1, D2
IEC clamps(4)
Dx to GND
0.2
Ω
GND to Dx
0.2
Ω


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