SI1900DL datasheet(2/4 Pages) VISHAY

No. de pieza	SI1900DL

Descripción Electrónicos	Dual N-Channel 30-V (D-S) MOSFET

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Si1900DL

Vishay Siliconix

www.vishay.com

2

Document Number: 71251

S-21374—Rev. C, 12-Aug-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 24 V, VGS = 0 V

1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 85_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

1.0

A

a

VGS = 10 V, ID = 0.59 A

0.410

0.480

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 0.2 A

0.600

0.700

W

Forward Transconductancea

gfs

VDS = 10 V, ID = 0.59 A

0.75

S

Diode Forward Voltagea

VSD

IS = 0.23 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

0.86

1.4

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 10 V, ID = 0.59 A

0.24

nC

Gate-Drain Charge

Qgd

0.08

Turn-On Delay Time

td(on)

5

10

Rise Time

tr

VDD = 15 V, RL = 30 W

8

15

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 30 W

ID ^ 0.5 A, VGEN = 10 V, RG = 6 W

8

15

ns

Fall Time

tf

7

15

Source-Drain Reverse Recovery Time

trr

IF = 0.23 A, di/dt = 100 A/ms

15

30

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 thru 4 V

TC = 125_C

-55

_C

3 V

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

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