TPIC0108B

PWM CONTROL INTELLIGENT HBRIDGE

SLIS068A − NOVEMBER1998 − REVISED APRIL 2002

5

POST OFFICE BOX 655303

electrical characteristics over recommended operating case temperature and supply voltage

ranges (unless otherwise noted) (see Note 2)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

TJ = 25°C

VCC = 6 V to 9 V

380

LSD

TJ = 25°C

VCC = 9 V to 18 V

280

340

m

Ω

LSD

TJ = 150°C

VCC = 6 V to 9 V

620

m

Ω

rDS(on)

Static drain-source on-resistance

TJ = 150°C

VCC = 9 V to 18 V

400

560

rDS(on)

Static drain-source on-resistance

(per transistor) IBR = 1 A

TJ = 25°C

VCC = 6 V to 9 V

430

(per transistor) IBR = 1 A

HSD

TJ = 25°C

VCC = 9 V to 18 V

280

340

m

Ω

HSD

TJ = 150°C

VCC = 6 V to 9 V

640

m

Ω

TJ = 150°C

VCC = 9 V to 18 V

400

560

I(QB)

Quiescent battery current

TJ = 25°C

VCC = 13.2 V

20

µA

I(QCD)

Open circuit detection current

10

40

100

mA

TSDS

Static thermal shutdown temperature

See Notes 3 and 4

140

°C

TSDD

Dynamic thermal shutdown temperature

See Notes 3 and 5

160

°C

ICS

Current shutdown limit

VCC = 6 V to 9 V

4.8

7.5

A

ICS

Current shutdown limit

VCC = 9 V to 18 V

5

7.5

A

I(CON)

Continuous bridge current

TJ = 125°C, Operating lifetime 10,000 hours,

(see Figure 1)

3

A

V(OVCC)

Over voltage detection on VCC

27

36

V

V(STL)

STATUS low output voltage

IO = 100 µA

0.8

V

V(ST2H)

STATUS2 high output voltage

IO = 20 µA

3.9

5.4

V

I(ST(OFF)) STATUS output leakage current

V(ST) = 5 V

5

µA

VIL

Low level logic input voltage

−0.3

0.8

V

VIH

High level logic input voltage

3.6

7

V

∆VI

Hysteresis of input voltage

0.3

V

IIH

High level logic input current

VIH = 3.5 V

2

10

50

µA

NOTES:

2. The device functions according to the function table for VCC between 18 V and V(OVCC), but only up to a maximum supply voltage

of 33 V (no parameters specified). Exposure beyond 18 V for extended periods may affect device reliability.

3. Exposure beyond absolute-maximum-rated condition of junction temperature may affect device reliability.

4. No temperature gradient between DMOS transistor and temperature sensor.

5. With temperature gradient between DMOS transistor and temperature sensor in a typical application (DMOS transistor as heat

source).

switching characteristics over recommended operating case temperature and supply voltage

ranges (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

tout(on)

High-side driver turn-on time

VDS(on)<1 V at 1 A,

VCC = 13.2 V

100

s

tout(on)

Low-side driver turn-on time

VDS(on)<1 V at 1 A,

VCC = 13.2 V

100

µs

SR

Slew rate, low-to-high sinusoidal (

δV/δt)

VCC = 13.2 V,

IO = 1 A resistive load

1

6

V/ s

SR

Slew rate, high-to-low sinusoidal (

δV/δt)

VCC = 13.2 V,

IO = 1 A resistive load

1

6

V/

µs

td(QCD)

Under current spike duration to trigger

open circuit detection

VCC = 5 V to 18 V

1

10

ms

td(CS)

Delay time for over current shutdown

5

10

25

µs