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TPIC5223L Datasheet(PDF) 6 Page - Texas Instruments

No. de Pieza. TPIC5223L
Descripción  2-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY
Descarga  13 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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TPIC5223L Datasheet(HTML) 6 Page - Texas Instruments

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TPIC5223L
2-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL
POWER DMOS ARRAY
SLIS043A – NOVEMBER 1994 – REVISED SEPTEMBER 1995
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
VDD = 25 V
14 mH
ID
tw
tav
IAS
V(BR)DSX = 60 V Min
VOLTAGE AND CURRENT WAVEFORMS
0 V
0 V
0 V
ID
VDS
DUT
VDS
TEST CIRCUIT
(see Note A)
(see Note B)
Pulse Generator
50
Rgen
50
VGS
VGS
5 V
NOTES: A. The pulse generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω.
B. Input pulse duration (tw) is increased until peak current IAS = 3 A.
Energy test level is defined as E
AS +
I
AS
V
(BR)DSX
tav
2
+ 108 mJ, where tav + avalanche time.
Figure 4. Single-Pulse Avalanche-Energy Test Circuit and Waveforms
TYPICAL CHARACTERISTICS
Figure 5
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
TJ – Junction Temperature – °C
1
0.5
0
1.5
2
2.5
– 40 – 20
0
20
40
60
80
100 120 140 160
VDS = VGS
ID = 1 mA
ID = 100 µA
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
TJ – Junction Temperature – °C
0.4
0.2
0
0.6
0.8
1
– 40 – 20
0
20
40
60
80
100 120 140 160
ID = 1 A
VGS = 4.5 V
VGS = 5 V
Figure 6


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