TPS2660 datasheet(6/45 Pages) TI1

No. de pieza	TPS2660

Descripción Electrónicos	TPS2660x 60-V, 2-A Industrial eFuse with Integrated Reverse Input Polarity Protection

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Fabricante Electrónico	TI1 [Texas Instruments]

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6

TPS2660

SLVSDG2A – JULY 2016 – REVISED AUGUST 2016

www.ti.com

Product Folder Links: TPS2660

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7.5 Electrical Characteristics

–40°C

≤ TA = TJ ≤ +125°C, V(IN) = 24 V, V(SHDN) = 2 V, R(ILIM) = 120 kΩ, IMON = FLT = OPEN, C(OUT) = 1 μF, C(dVdT) = OPEN.

(All voltages referenced to GND, (unless otherwise noted))

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY VOLTAGE

V(IN)

Operating input voltage

4.2

55

V

V(PORR)

Internal POR threshold, rising

3.9

4

4.1

V

V(PORHys)

Internal POR hysteresis

250

275

300

mV

IQ(ON)

Supply current

Enabled: V(SHDN) = 2 V

190

300

390

µA

IQ(OFF)

V(SHDN) = 0 V

11

20

33

µA

I(VINR)

Reverse input supply current

V(IN) = –60 V, V(OUT) = 0 V

52

µA

V(OVC)

Over voltage clamp

V(IN) > 42 V, TPS26602 only

36

37.5

40

V

UNDERVOLTAGE LOCKOUT (UVLO) INPUT

V(IN_UVLO)

Factory set V(IN) undervoltage

trip level

V(IN) rising, V(UVLO) = 0 V

14.25

14.9

15.75

V

V(IN) falling, V(UVLO) = 0 V

13.25

13.8

14.75

V(SEL_UVLO)

Internal UVLO select threshold

180

200

240

mV

V(UVLOR)

UVLO threshold voltage, rising

1.175

1.19

1.225

V

V(UVLOF)

UVLO threshold voltage, falling

1.095

1.1

1.125

V

I(UVLO)

UVLO Input leakage current

0 V

≤ V(UVLO) ≤ 60 V

–100

0

100

nA

LOW IQ SHUTDOWN (SHDN) INPUT

V(SHDN)

Output voltage

I(SHDN) = 0.1 µA

2

2.7

3.4

V

V(SHUTF)

SHDN threshold voltage for

low IQ shutdown, falling

0.55

0.76

0.94

V

I(SHDN)

Leakage current

V(SHDN) = 0.4 V

–10

µA

OVER VOLTAGE PROTECTION (OVP) INPUT

V(IN_OVP)

Factory set V(IN) over voltage

trip level

V(IN) rising, V(OVP) = 0 V

31

32.6

34

V

V(IN) falling, V(OVP) = 0 V

28.5

30.3

31.5

V(SEL_OVP)

Internal OVP select threshold

180

200

240

mV

V(OVPR)

Over-voltage threshold

voltage, rising

1.175

1.19

1.225

V

V(OVPF)

Over-voltage threshold, falling

1.095

1.1

1.125

V

I(OVP)

OVP input leakage current

0 V

≤ V(OVP) ≤ 4 V

–100

0

100

nA

OUTPUT RAMP CONTROL (dVdT)

I(dVdT)

dVdT charging current

V(dVdT) = 0 V

4

4.7

5.5

µA

R(dVdT)

dVdT discharging resistance

V(SHDN) = 0 V, with I(dVdT) = 10 mA

sinking

14

Ω

GAIN(dVdT)

dVdT to OUT gain

V(OUT) /V(dVdT)

23.75

24.6

25.5

V/V

CURRENT LIMIT PROGRAMMING (ILIM)

V(ILIM)

ILIM bias voltage

1

V

I(OL)

Overload current limit

R(ILIM) = 120 kΩ, V(IN) – V(OUT) = 1 V

0.085

0.1

0.115

A

R(ILIM) = 12 kΩ, V(IN) – V(OUT) = 1 V

0.95

1

1.05

R(ILIM) = 8 kΩ, V(IN) – V(OUT) = 1 V

1.425

1.5

1.575

R(ILIM) = 5.36 kΩ, V(IN) – V(OUT) = 1 V

2.11

2.23

2.35

I(OL_R-OPEN)

R(ILIM) = OPEN, Open resistor current

limit (single point failure test:

UL60950)

0.055

I(OL_R-SHORT)

R(ILIM) = SHORT, Shorted resistor

current limit (single point failure test:

UL60950)

0.095

I(CB)

Circuit breaker detection

threshold

R(ILIM) = 120 kΩ, MODE = open

0.045

0.073

0.11

A

R(ILIM) = 5.36 kΩ, MODE = open

2

2.21

2.4

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