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TPS25740ARGET Datasheet(PDF) 6 Page - Texas Instruments |
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TPS25740ARGET Datasheet(HTML) 6 Page - Texas Instruments |
6 / 64 page 6 TPS25740, TPS25740A SLVSDG8A – APRIL 2016 – REVISED MAY 2016 www.ti.com Product Folder Links: TPS25740 TPS25740A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN Supply Voltage VDD 0 5.5 V VPWR 4.65 25 V VI Applied Voltage EN12V, EN9V, PCTRL, CC1, CC2, CTL1, CTL2 0 5.5 V GD 0 6.5 V DSCG, GDNS, VBUS 0 25 V HIPWR, PSEL 0 DVDD V VI Pin-to-pin voltage ISNS - VBUS –0.1 0.1 V VIH High-Level Input Voltage EN12V, EN9V 1.4 V PCTRL 2 V GD 2 V VIL Low-Level Input Voltage EN12V, EN9V 0.5 V PCTRL 1.6 V GD 1.6 V IS Sinking Current CTL1, CTL2, UFP 5 mA GD 80 µA DSCG, transient sinking current 50 ms pulse, 0.25% duty cycle 350 mA DSCG, average 5 mA CS Shunt capacitance CC1, CC2 (C(RX)) 200 560 600 pF VBUS (C(PDIN)) 10 µF DVDD (C(DVDD)) 0.198 0.22 0.242 µF VAUX (C(VAUX)) 0.09 0.1 0.11 µF VTX (C(VTX)) 0.09 0.10 0.11 µF VDD (C(VDD)) 0.09 µF RS Sense resistance Configured for 3 A 5 6.4 m Ω Configured for 5 A 5 5.8 m Ω R(PUD) Pull up/down resistance HIPWR, PSEL (direct to GND or direct to DVDD) 0 1 k Ω HIPWR, PSEL (R(SEL) ) 80 100 120 k Ω R(DSCG) Series resistance Maximum VBUS voltage of 25 V 80 Ω Maximum VBUS voltage of 15 V 43 Ω Maximum VBUS voltage of 6 V 20 Ω TJ Operating junction temperature -40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 7.4 Thermal Information THERMAL METRIC(1) TPS25740 TPS25740A UNIT RGE (VQFN) 24 PINS RθJA Junction-to-ambient thermal resistance 33 °C/W RθJC(top) Junction-to-case (top) thermal resistance 32.6 °C/W RθJB Junction-to-board thermal resistance 10 °C/W ψJT Junction-to-top characterization parameter 0.4 °C/W ψJB Junction-to-board characterization parameter 10 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 2.6 °C/W |
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