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TPS25740ARGET Datasheet(PDF) 6 Page - Texas Instruments

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No. de pieza TPS25740ARGET
Descripción Electrónicos  USB Type-C and USB PD Source Controller
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

TPS25740ARGET Datasheet(HTML) 6 Page - Texas Instruments

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TPS25740, TPS25740A
SLVSDG8A – APRIL 2016 – REVISED MAY 2016
www.ti.com
Product Folder Links: TPS25740 TPS25740A
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Supply Voltage
VDD
0
5.5
V
VPWR
4.65
25
V
VI
Applied Voltage
EN12V, EN9V, PCTRL, CC1, CC2,
CTL1, CTL2
0
5.5
V
GD
0
6.5
V
DSCG, GDNS, VBUS
0
25
V
HIPWR, PSEL
0
DVDD
V
VI
Pin-to-pin voltage
ISNS - VBUS
–0.1
0.1
V
VIH
High-Level Input Voltage
EN12V, EN9V
1.4
V
PCTRL
2
V
GD
2
V
VIL
Low-Level Input Voltage
EN12V, EN9V
0.5
V
PCTRL
1.6
V
GD
1.6
V
IS
Sinking Current
CTL1, CTL2, UFP
5
mA
GD
80
µA
DSCG, transient sinking current 50 ms
pulse, 0.25% duty cycle
350
mA
DSCG, average
5
mA
CS
Shunt capacitance
CC1, CC2 (C(RX))
200
560
600
pF
VBUS (C(PDIN))
10
µF
DVDD (C(DVDD))
0.198
0.22
0.242
µF
VAUX (C(VAUX))
0.09
0.1
0.11
µF
VTX (C(VTX))
0.09
0.10
0.11
µF
VDD (C(VDD))
0.09
µF
RS
Sense resistance
Configured for 3 A
5
6.4
m
Ω
Configured for 5 A
5
5.8
m
Ω
R(PUD)
Pull up/down resistance
HIPWR, PSEL (direct to GND or direct
to DVDD)
0
1
k
Ω
HIPWR, PSEL (R(SEL) )
80
100
120
k
Ω
R(DSCG)
Series resistance
Maximum VBUS voltage of 25 V
80
Ω
Maximum VBUS voltage of 15 V
43
Ω
Maximum VBUS voltage of 6 V
20
Ω
TJ
Operating junction temperature
-40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.4 Thermal Information
THERMAL METRIC(1)
TPS25740
TPS25740A
UNIT
RGE (VQFN)
24 PINS
RθJA
Junction-to-ambient thermal resistance
33
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
32.6
°C/W
RθJB
Junction-to-board thermal resistance
10
°C/W
ψJT
Junction-to-top characterization parameter
0.4
°C/W
ψJB
Junction-to-board characterization parameter
10
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.6
°C/W


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