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TPS3839L30DBZT Datasheet(PDF) 6 Page - Texas Instruments

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No. de pieza TPS3839L30DBZT
Descripción Electrónicos  Ultralow Power, Supply Voltage Monitor
Download  31 Pages
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

TPS3839L30DBZT Datasheet(HTML) 6 Page - Texas Instruments

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TPS3831, TPS3839
SBVS193D – JUNE 2012 – REVISED JULY 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range, unless otherwise noted
(1)
MIN
MAX
UNIT
VDD, RESET
–0.3
7
V
Voltage
MR
–0.3
VDD + 0.3
V
Current
RESET pin
–10
10
mA
Operating ambient, TA
–40
85
Temperature(2)
°C
Storage, Tstg
–65
150
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
As a result of the low dissipated power in this device, the junction temperature is assumed to be equal to the ambient temperature.
7.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
±500
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD
Input supply voltage
0.9
6.5
V
VMR
Manual reset pin voltage
0
VDD
V
VRESET
RESET pin voltage
0
6.5
V
IRESET
RESET pin current
0
8
mA
7.4 Thermal Information
TPS3831,
TPS3839
TPS3839
THERMAL METRIC(1)
UNIT
DBZ (SOT23-3)
DQN (X2SON)
3 PINS
4 PINS
RθJA
Junction-to-ambient thermal resistance
346.6
216.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
124.4
161.7
°C/W
RθJB
Junction-to-board thermal resistance
78.9
162.1
°C/W
ψJT
Junction-to-top characterization parameter
11.5
5.1
°C/W
ψJB
Junction-to-board characterization parameter
77.3
161.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
123.0
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6
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