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TPS5110 Datasheet(PDF) 9 Page - Texas Instruments

No. de pieza TPS5110
Descripción Electrónicos  SYNCHRONOUS-BUCK PWM CONTROLLER WITH NMOS LDO CONTROLLER
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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TPS5110 Datasheet(HTML) 9 Page - Texas Instruments

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TPS5110
SLVS025B − APRIL 2002 − REVISED JULY 2004
9
www.ti.com
DETAILED DESCRIPTION
dead time
The internally defined dead-time prevents shoot-through current flowing through the main power MOSFETs
during switching transitions. Typical value of the dead-time is 100 ns.
standby
The SBRC and the LDO controller can be switched into standby mode separately by grounding the STBY pin
and/or SYBY_LDO pins. The standby-mode current, when both controllers are off, can be as low as 1 nA.
Table 1. Standby Logic (VREG5V_IN > 4 V){
STBY
STBY_LDO
SBRC
LDO
POWERGOOD
L
L
OFF
OFF
OFF
L
H
OFF
ON
OFF
H
L
ON
OFF
OFF
H
H
ON
ON
ON
soft start
Soft-start ramp up of the SBRC is controlled by the SOFTSTART pin voltage. After the STBY pin is raised to
a HIGH level, an internal current source charges up an external capacitor connected between the SOFTSTART
and GND pins. The output voltage ramps up as the SOFTSTART pin voltage increases from 0 V to 0.85 V. The
soft-start time is easily calculated by the supply current and the capacitance value (see application information).
The soft-start timing circuit for the LDO is integrated into the device. The soft-start time is fixed and can be as
short as 600
µs. This is observed when the LDO is turned on separately from the SBRC. Simultaneous start
up of the two outputs is also possible. Tie the LDO input to the SBRC’s output and let both STBY_LDO and STBY
voltages rise to the HIGH level simultaneously, then the LDO’s output follows the ramp of the SBRC’s output.
over current protection
Over current protection (OCP) is achieved by comparing the drain-to-source voltage of the high-side and
low-side MOSFET to a set-point voltage, which is defined by both the internal current source, ITRIP, and the
external resistor connected between the VIN_SENSE and TRIP pins. ITRIP has a typical value of 13 µA at 25°C.
When the drain-to-source voltage exceeds the set-point voltage during low-side conduction, the high-side
current comparator becomes active, and the low-side pulse is extended until this voltage comes back below
the threshold. If the set-point voltage is exceeded during high-side conduction in the following cycle, the
current-limit circuit terminates the high-side driver pulse. Together this action has the effect of decreasing the
output voltage until the under voltage protection circuit is activated to latch both the high-side and low-side
drivers OFF. In the TPS5110, trip current ITRIP also has a temperature coefficient of 3400 ppm/°C in order to
compensate for temperature drift of the MOSFET on-resistance.


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