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BYM32Z Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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BYM32Z Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO-27,molded plas tic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unles s otherwis e specified. Single phase,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 3.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Typical junction capacitance (Note1) CJ pF Typical thermal resistance (Note2) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 200 140 200 DO - 27 VOLTAGE RANGE: 200 V CURRENT: 3.0 A Diffused junction Easily cleaned witn Freon,Alcohol,ls opropanol BYM32 200.0 IFSM NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55 ---- + 150 - 55 ---- + 150 IR BY M 3 2(Z) A 10.0 and similar s olvents IF(AV) 3.0 PLASTIC SILICON RECTIFIER The plastic material carries U/L recognition 94V-0 A 35 0.95 20 2. Thermal resistance f rom junction to ambient. µA 100.0 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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