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TPS57160QDRCRQ1 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS57160QDRCRQ1 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 54 page TPS57160-Q1 SLVSAP1E – DECEMBER 2010 – REVISED MARCH 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating temperature range (unless otherwise noted) (1) MIN MAX UNIT VIN –0.3 65 EN(2) –0.3 5 BOOT 73 VSENSE –0.3 3 Input voltage, VIN V COMP –0.3 3 PWRGD –0.3 6 SS/TR –0.3 3 RT/CLK –0.3 3.6 BOOT to PH 8 –0.6 65 Output voltage, VOUT 200 ns –1 65 V PH 30 ns –2 65 Maximum dc voltage, TJ = –40°C –0.85 Differential voltage, VDIFF PAD to GND ±200 mV EN 100 μA BOOT 100 mA Source current, ISOURCE VSENSE 10 μA PH Current Limit RT/CLK 100 μA VIN Current Limit COMP 100 μA Sink current, ISINK PWRGD 10 mA SS/TR 200 μA Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure beyond absolute maximum rated conditions for extended periods may affect device reliability. (2) See the Enable and Adjusting Undervoltage Lockout section for details. 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per AEC Q100-002(1) ±2000 All pins ±500 V(ESD) Electrostatic discharge V Charged-device model (CDM), per AEC Corner pins (1, 5, 6, and Q100-011 ±750 10) (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT TA Operating ambient temperature –40 125 °C 4 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: TPS57160-Q1 |
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