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TPS61196-Q1 Datasheet(PDF) 6 Page - Texas Instruments |
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TPS61196-Q1 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 31 page TPS61196-Q1 SNVSA79 – MARCH 2015 www.ti.com Electrical Characteristics (continued) VIN= 24 V, C1 = 10 μF, C2 = 2.2 μF, C3 = 1 μF, EC1 = EC2 = 100 μF; Typical values are at TA = 25°C, Minimum and Maximum limits are over the operating temperature range (TA = –40°C to 125°C) (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IFB REGULATION VOLTAGE Measured on VIFB(min), other IFB voltages are 0.5 V above VIFB(min). VIFB Regulation voltage at IFB 508 mV IIFB = 130 mA, VIFBV = 0.5 V IFB Regulation voltage setting IIFBV VIFBV = 0.5 V 0.247 0.25 0.253 IISET sourcing current at IFBV VIFBV IFBV voltage setting range 0.3 1 V BOOST REFERENCE VOLTAGE Reference voltage range for Boost VREF 0 3.1 V Controller IREF_LEAK Leakage current at REF pin –25 25 nA OSCILLATOR fSW Switching frequency RFSW = 200 kΩ 187 200 213 kHz VFSW FSW pin reference voltage 1.8 V Dmax Maximum duty cycle fSW = 200 kHz 90% 94% 98% ton(min) Minimum pulse width 200 ns VFSW_H Logic high input voltage 3.5 V VFSW_L Logic low input voltage 0.5 V ERROR AMPLIFIER ISINK Comp pin sink current VOVP = VREF + 200 mV, VCOMP = 1 V 20 µA ISOURCE Comp pin source current VOVP = VREF – 200 mV, VCOMP = 1 V 20 µA GmEA Error amplifier transconductance 90 120 150 µs REA Error amplifier output resistance 20 M Ω fEA Error amplifier crossover frequency 1000 kHz GATE DRIVER Gate driver impedance when RGDRV(SRC) VDD = 6 V, IGDRV = –20 mA 2 3 Ω sourcing Gate driver impedance when RGDRV(SNK) VDD = 6 V, IGDRV = 20 mA 1 1.5 Ω sinking IGDRV(SRC) Gate driver source current VGDRV = 5 V 200 mA IGDRV(SNK) Gate driver sink current VGDRV = 1 V 400 mA VISNS(OC) Overcurrent detection threshold VIN = 8 V to 30 V, TJ = 25°C to 125°C 376 400 424 mV OVERVOLTAGE PROTECTION (OVP) VOVPTH Output voltage OVP threshold 2.95 3.02 3.09 V IOVP Leakage current –100 0 100 nA VIFB_OVP IFBx over voltage threshold PWM ON 38 V LED SHORT DETECTION LED short detection sourcing IFBP VFBP = 1 V 0.247 0.25 0.253 IISET current FAULT INDICATOR IFAULT_H Leakage current in high impedance VFAULT = 24 V 1 nA IFAULT_L Sink current at low output VFAULT = 1 V 1 2 mA THERMAL SHUTDOWN Tshutdown Thermal shutdown threshold 150 °C Thermal shutdown threshold Thys 15 °C hysteresis 6 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: TPS61196-Q1 |
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